Ion-beam-defect processes in group-III nitrides and ZnO

S. O. Kucheyev*, J. S. Williams, C. Jagadish

*Corresponding author for this work

    Research output: Contribution to journalConference articlepeer-review

    51 Citations (Scopus)

    Abstract

    Recently, there has been much interest in wide band-gap wurtzite semiconductors such as group-III nitrides (GaN, AlGaN, and InGaN) and ZnO. Ion-beam-defect processes are considerably more complex in these wurtzite semiconductors than in the case of both elemental and group-III-V cubic semiconductors. This brief review focuses on our recent studies of the following aspects of ion-beam-defect processes: (i) effects of implanted species and the density of collision cascades, (ii) the nature of ion-beam-produced planar defects in GaN, (iii) defect production in GaN by swift heavy ions, (iv) blistering of H-implanted GaN, (v) electrical isolation of GaN and ZnO, (vi) the effect of Al and In content on defect processes in III-nitrides, and (vii) structural damage in ZnO with an intriguing effect of the formation of an anomalous defect peak. Emphasis is given to unusual ion-beam-defect processes and to the physical mechanisms underlying them.

    Original languageEnglish
    Pages (from-to)93-104
    Number of pages12
    JournalVacuum
    Volume73
    Issue number1
    DOIs
    Publication statusPublished - 8 Mar 2004
    Event16th Ion-Surface Interactions Conference - Zvenigorod, Russian Federation
    Duration: 25 Aug 200329 Aug 2003

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