@inproceedings{754e8fb6cfac4884be3eabc1f1906e62,
title = "ION BEAM INDUCED AMORPHIZATION AND CRYSTALLIZATION PROCESSES IN SILICON AND GaAs.",
abstract = "Thin amorphous layers in crystalline Si and GaAs substrates have been irradiated at selected temperatures with 1. 5 MeV Ne** plus ions to induce either epitaxial crystallization or amorphization. In Si, such irradiation can induce complete epitaxial crystallization of a 1000 Angstrom surface amorphous layer for temperatures typically greater than 200 degree C whereas, at significantly lower temperatures, layer-by-layer amorphization results. Although epitaxial crystallization can also be stimulated in GaAs by ion irradiation at temperatures greater than 65 degree C, the process is non-linear with ion dose and results in poor quality crystal growth for amorphous layers greater than a few hundred Angstroms in thickness. Layer-by-layer amorphization has not been observed in GaAs.",
author = "Elliman, {R. G.} and Williams, {J. S.} and Johnson, {S. T.} and E. Nygren",
year = "1987",
language = "English",
isbn = "0931837405",
series = "Materials Research Society Symposia Proceedings",
publisher = "Materials Research Soc",
pages = "471--476",
editor = "Thompson, {Michael O.} and S.Thomas Picraux and Williams, {James S.}",
booktitle = "Materials Research Society Symposia Proceedings",
note = "Beam-Solid Interact and Transient Processes ; Conference date: 01-12-1986 Through 04-12-1986",
}