ION BEAM INDUCED AMORPHIZATION AND CRYSTALLIZATION PROCESSES IN SILICON AND GaAs.

R. G. Elliman; J. S. Williams; S. T. Johnson; E. Nygren

ION BEAM INDUCED AMORPHIZATION AND CRYSTALLIZATION PROCESSES IN SILICON AND GaAs.

R. G. Elliman^*, J. S. Williams, S. T. Johnson, E. Nygren

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

7 Citations (Scopus)

Abstract

Thin amorphous layers in crystalline Si and GaAs substrates have been irradiated at selected temperatures with 1. 5 MeV Ne** plus ions to induce either epitaxial crystallization or amorphization. In Si, such irradiation can induce complete epitaxial crystallization of a 1000 Angstrom surface amorphous layer for temperatures typically greater than 200 degree C whereas, at significantly lower temperatures, layer-by-layer amorphization results. Although epitaxial crystallization can also be stimulated in GaAs by ion irradiation at temperatures greater than 65 degree C, the process is non-linear with ion dose and results in poor quality crystal growth for amorphous layers greater than a few hundred Angstroms in thickness. Layer-by-layer amorphization has not been observed in GaAs.

Original language	English
Title of host publication	Materials Research Society Symposia Proceedings
Editors	Michael O. Thompson, S.Thomas Picraux, James S. Williams
Publisher	Materials Research Soc
Pages	471-476
Number of pages	6
ISBN (Print)	0931837405
Publication status	Published - 1987
Externally published	Yes
Event	Beam-Solid Interact and Transient Processes - Boston, MA, USA Duration: 1 Dec 1986 → 4 Dec 1986

Publication series

Name	Materials Research Society Symposia Proceedings
Volume	74
ISSN (Print)	0272-9172

Conference

Conference	Beam-Solid Interact and Transient Processes
City	Boston, MA, USA
Period	1/12/86 → 4/12/86

Cite this

@inproceedings{754e8fb6cfac4884be3eabc1f1906e62,

title = "ION BEAM INDUCED AMORPHIZATION AND CRYSTALLIZATION PROCESSES IN SILICON AND GaAs.",

abstract = "Thin amorphous layers in crystalline Si and GaAs substrates have been irradiated at selected temperatures with 1. 5 MeV Ne** plus ions to induce either epitaxial crystallization or amorphization. In Si, such irradiation can induce complete epitaxial crystallization of a 1000 Angstrom surface amorphous layer for temperatures typically greater than 200 degree C whereas, at significantly lower temperatures, layer-by-layer amorphization results. Although epitaxial crystallization can also be stimulated in GaAs by ion irradiation at temperatures greater than 65 degree C, the process is non-linear with ion dose and results in poor quality crystal growth for amorphous layers greater than a few hundred Angstroms in thickness. Layer-by-layer amorphization has not been observed in GaAs.",

author = "Elliman, \{R. G.\} and Williams, \{J. S.\} and Johnson, \{S. T.\} and E. Nygren",

year = "1987",

language = "English",

isbn = "0931837405",

series = "Materials Research Society Symposia Proceedings",

publisher = "Materials Research Soc",

pages = "471--476",

editor = "Thompson, \{Michael O.\} and S.Thomas Picraux and Williams, \{James S.\}",

booktitle = "Materials Research Society Symposia Proceedings",

note = "Beam-Solid Interact and Transient Processes ; Conference date: 01-12-1986 Through 04-12-1986",

}

Elliman, RG, Williams, JS, Johnson, ST & Nygren, E 1987, ION BEAM INDUCED AMORPHIZATION AND CRYSTALLIZATION PROCESSES IN SILICON AND GaAs. in MO Thompson, ST Picraux & JS Williams (eds), Materials Research Society Symposia Proceedings. Materials Research Society Symposia Proceedings, vol. 74, Materials Research Soc, pp. 471-476, Beam-Solid Interact and Transient Processes, Boston, MA, USA, 1/12/86.

ION BEAM INDUCED AMORPHIZATION AND CRYSTALLIZATION PROCESSES IN SILICON AND GaAs. / Elliman, R. G.; Williams, J. S.; Johnson, S. T. et al.
Materials Research Society Symposia Proceedings. ed. / Michael O. Thompson; S.Thomas Picraux; James S. Williams. Materials Research Soc, 1987. p. 471-476 (Materials Research Society Symposia Proceedings; Vol. 74).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

TY - GEN

T1 - ION BEAM INDUCED AMORPHIZATION AND CRYSTALLIZATION PROCESSES IN SILICON AND GaAs.

AU - Elliman, R. G.

AU - Williams, J. S.

AU - Johnson, S. T.

AU - Nygren, E.

PY - 1987

Y1 - 1987

N2 - Thin amorphous layers in crystalline Si and GaAs substrates have been irradiated at selected temperatures with 1. 5 MeV Ne** plus ions to induce either epitaxial crystallization or amorphization. In Si, such irradiation can induce complete epitaxial crystallization of a 1000 Angstrom surface amorphous layer for temperatures typically greater than 200 degree C whereas, at significantly lower temperatures, layer-by-layer amorphization results. Although epitaxial crystallization can also be stimulated in GaAs by ion irradiation at temperatures greater than 65 degree C, the process is non-linear with ion dose and results in poor quality crystal growth for amorphous layers greater than a few hundred Angstroms in thickness. Layer-by-layer amorphization has not been observed in GaAs.

AB - Thin amorphous layers in crystalline Si and GaAs substrates have been irradiated at selected temperatures with 1. 5 MeV Ne** plus ions to induce either epitaxial crystallization or amorphization. In Si, such irradiation can induce complete epitaxial crystallization of a 1000 Angstrom surface amorphous layer for temperatures typically greater than 200 degree C whereas, at significantly lower temperatures, layer-by-layer amorphization results. Although epitaxial crystallization can also be stimulated in GaAs by ion irradiation at temperatures greater than 65 degree C, the process is non-linear with ion dose and results in poor quality crystal growth for amorphous layers greater than a few hundred Angstroms in thickness. Layer-by-layer amorphization has not been observed in GaAs.

UR - https://www.scopus.com/pages/publications/0023549241

M3 - Conference Paper

AN - SCOPUS:0023549241

SN - 0931837405

T3 - Materials Research Society Symposia Proceedings

SP - 471

EP - 476

BT - Materials Research Society Symposia Proceedings

A2 - Thompson, Michael O.

A2 - Picraux, S.Thomas

A2 - Williams, James S.

PB - Materials Research Soc

T2 - Beam-Solid Interact and Transient Processes

Y2 - 1 December 1986 through 4 December 1986

ER -

ION BEAM INDUCED AMORPHIZATION AND CRYSTALLIZATION PROCESSES IN SILICON AND GaAs.

Abstract

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Conference

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