Ion-beam-induced amorphization and dynamic annealing processes in silicon

J. S. Williams; K. T. Short; R. G. Elliman; M. C. Ridgway; R. Goldberg

doi:10.1016/0168-583X(90)90154-M

Ion-beam-induced amorphization and dynamic annealing processes in silicon

J. S. Williams^*, K. T. Short, R. G. Elliman, M. C. Ridgway, R. Goldberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Amorphization of (100) silicon has been studied during elevated-temperature implantation with keV heavy ions. The amorphization process is very sensitive to the balance between defect production and annihilation rates, the latter resulting from dynamic annealing during ion bombardment. Amorphous-phase production is shown to depend critically on the ion dose rate. Further measurements have indicated that the amorphous phase can be difficult to nucleate at elevated temperatures, requiring the presence of existing interfaces, surfaces or crystal defects to provide appropriate nucleation sites.

Original language	English
Pages (from-to)	431-434
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	48
Issue number	1-4
DOIs	https://doi.org/10.1016/0168-583X(90)90154-M
Publication status	Published - 2 Mar 1990
Externally published	Yes

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@article{50a99ee51f454826bc1d2ea95b4f3093,

title = "Ion-beam-induced amorphization and dynamic annealing processes in silicon",

abstract = "Amorphization of (100) silicon has been studied during elevated-temperature implantation with keV heavy ions. The amorphization process is very sensitive to the balance between defect production and annihilation rates, the latter resulting from dynamic annealing during ion bombardment. Amorphous-phase production is shown to depend critically on the ion dose rate. Further measurements have indicated that the amorphous phase can be difficult to nucleate at elevated temperatures, requiring the presence of existing interfaces, surfaces or crystal defects to provide appropriate nucleation sites.",

author = "Williams, {J. S.} and Short, {K. T.} and Elliman, {R. G.} and Ridgway, {M. C.} and R. Goldberg",

year = "1990",

month = mar,

day = "2",

doi = "10.1016/0168-583X(90)90154-M",

language = "English",

volume = "48",

pages = "431--434",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Ion-beam-induced amorphization and dynamic annealing processes in silicon

AU - Williams, J. S.

AU - Short, K. T.

AU - Elliman, R. G.

AU - Ridgway, M. C.

AU - Goldberg, R.

PY - 1990/3/2

Y1 - 1990/3/2

N2 - Amorphization of (100) silicon has been studied during elevated-temperature implantation with keV heavy ions. The amorphization process is very sensitive to the balance between defect production and annihilation rates, the latter resulting from dynamic annealing during ion bombardment. Amorphous-phase production is shown to depend critically on the ion dose rate. Further measurements have indicated that the amorphous phase can be difficult to nucleate at elevated temperatures, requiring the presence of existing interfaces, surfaces or crystal defects to provide appropriate nucleation sites.

AB - Amorphization of (100) silicon has been studied during elevated-temperature implantation with keV heavy ions. The amorphization process is very sensitive to the balance between defect production and annihilation rates, the latter resulting from dynamic annealing during ion bombardment. Amorphous-phase production is shown to depend critically on the ion dose rate. Further measurements have indicated that the amorphous phase can be difficult to nucleate at elevated temperatures, requiring the presence of existing interfaces, surfaces or crystal defects to provide appropriate nucleation sites.

UR - http://www.scopus.com/inward/record.url?scp=0025399816&partnerID=8YFLogxK

U2 - 10.1016/0168-583X(90)90154-M

DO - 10.1016/0168-583X(90)90154-M

M3 - Article

AN - SCOPUS:0025399816

SN - 0168-583X

VL - 48

SP - 431

EP - 434

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

Ion-beam-induced amorphization and dynamic annealing processes in silicon

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