Ion-beam-induced epitaxial crystallization kinetics in ion implanted GaAs

S. T. Johnson; J. S. Williams; E. Nygren; R. G. Elliman

doi:10.1063/1.342029

Ion-beam-induced epitaxial crystallization kinetics in ion implanted GaAs

S. T. Johnson^*, J. S. Williams, E. Nygren, R. G. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Thin amorphous GaAs layers on (100)-oriented substrates, generated by Si⁺ ion bombardment at 77 K, have been observed to recrystallize epitaxially during 1.5-MeV Ne⁺ bombardment in the temperature range 75-135 °C. Crystallization proceeds linearly with increasing ion fluence, except in the near-surface region, and the process is characterized by an activation energy of 0.16 eV, which is an order of magnitude smaller than that obtained for conventional thermal annealing at much higher temperatures.

Original language	English
Pages (from-to)	6567-6569
Number of pages	3
Journal	Journal of Applied Physics
Volume	64
Issue number	11
DOIs	https://doi.org/10.1063/1.342029
Publication status	Published - 1988
Externally published	Yes

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10.1063/1.342029

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title = "Ion-beam-induced epitaxial crystallization kinetics in ion implanted GaAs",

abstract = "Thin amorphous GaAs layers on (100)-oriented substrates, generated by Si+ ion bombardment at 77 K, have been observed to recrystallize epitaxially during 1.5-MeV Ne+ bombardment in the temperature range 75-135 °C. Crystallization proceeds linearly with increasing ion fluence, except in the near-surface region, and the process is characterized by an activation energy of 0.16 eV, which is an order of magnitude smaller than that obtained for conventional thermal annealing at much higher temperatures.",

author = "Johnson, {S. T.} and Williams, {J. S.} and E. Nygren and Elliman, {R. G.}",

year = "1988",

doi = "10.1063/1.342029",

language = "English",

volume = "64",

pages = "6567--6569",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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T1 - Ion-beam-induced epitaxial crystallization kinetics in ion implanted GaAs

AU - Johnson, S. T.

AU - Williams, J. S.

AU - Nygren, E.

AU - Elliman, R. G.

PY - 1988

Y1 - 1988

N2 - Thin amorphous GaAs layers on (100)-oriented substrates, generated by Si+ ion bombardment at 77 K, have been observed to recrystallize epitaxially during 1.5-MeV Ne+ bombardment in the temperature range 75-135 °C. Crystallization proceeds linearly with increasing ion fluence, except in the near-surface region, and the process is characterized by an activation energy of 0.16 eV, which is an order of magnitude smaller than that obtained for conventional thermal annealing at much higher temperatures.

AB - Thin amorphous GaAs layers on (100)-oriented substrates, generated by Si+ ion bombardment at 77 K, have been observed to recrystallize epitaxially during 1.5-MeV Ne+ bombardment in the temperature range 75-135 °C. Crystallization proceeds linearly with increasing ion fluence, except in the near-surface region, and the process is characterized by an activation energy of 0.16 eV, which is an order of magnitude smaller than that obtained for conventional thermal annealing at much higher temperatures.

UR - http://www.scopus.com/inward/record.url?scp=36549094386&partnerID=8YFLogxK

U2 - 10.1063/1.342029

DO - 10.1063/1.342029

M3 - Article

AN - SCOPUS:36549094386

SN - 0021-8979

VL - 64

SP - 6567

EP - 6569

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Ion-beam-induced epitaxial crystallization kinetics in ion implanted GaAs

Abstract

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