Ion beam induced epitaxial crystallization of GexSi 1-x/Si structures

R. G. Elliman; M. C. Ridgway; J. S. Williams; J. C. Bean

doi:10.1063/1.102264

Ion beam induced epitaxial crystallization of Ge_xSi _1-x/Si structures

R. G. Elliman^*, M. C. Ridgway, J. S. Williams, J. C. Bean

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Ge_xSi_1-x alloy layers grown on (100) silicon substrates by molecular beam epitaxy and amorphized by ion irradiation at -196°C are shown to recrystallize epitaxially during subsequent ion irradiation at 275°C. This ion beam annealing process has been examined for two different sample configurations: the first consisting of a thin amorphous layer extending from the surface to about half the thickness of the alloy layer, and the second consisting of a thick amorphous layer extending beyond the alloy layer into the underlying silicon. In both cases, ion beam annealing results in epitaxial crystallization of the alloy layer. Results are reported for alloy composition in the range from Ge_0.1Si_0.9 to Ge _0.8Si_0.2.

Original language	English
Pages (from-to)	843-845
Number of pages	3
Journal	Applied Physics Letters
Volume	55
Issue number	9
DOIs	https://doi.org/10.1063/1.102264
Publication status	Published - 1989
Externally published	Yes

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title = "Ion beam induced epitaxial crystallization of GexSi 1-x/Si structures",

abstract = "GexSi1-x alloy layers grown on (100) silicon substrates by molecular beam epitaxy and amorphized by ion irradiation at -196°C are shown to recrystallize epitaxially during subsequent ion irradiation at 275°C. This ion beam annealing process has been examined for two different sample configurations: the first consisting of a thin amorphous layer extending from the surface to about half the thickness of the alloy layer, and the second consisting of a thick amorphous layer extending beyond the alloy layer into the underlying silicon. In both cases, ion beam annealing results in epitaxial crystallization of the alloy layer. Results are reported for alloy composition in the range from Ge0.1Si0.9 to Ge 0.8Si0.2.",

author = "Elliman, {R. G.} and Ridgway, {M. C.} and Williams, {J. S.} and Bean, {J. C.}",

year = "1989",

doi = "10.1063/1.102264",

language = "English",

volume = "55",

pages = "843--845",

journal = "Applied Physics Letters",

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T1 - Ion beam induced epitaxial crystallization of GexSi 1-x/Si structures

AU - Elliman, R. G.

AU - Ridgway, M. C.

AU - Williams, J. S.

AU - Bean, J. C.

PY - 1989

Y1 - 1989

N2 - GexSi1-x alloy layers grown on (100) silicon substrates by molecular beam epitaxy and amorphized by ion irradiation at -196°C are shown to recrystallize epitaxially during subsequent ion irradiation at 275°C. This ion beam annealing process has been examined for two different sample configurations: the first consisting of a thin amorphous layer extending from the surface to about half the thickness of the alloy layer, and the second consisting of a thick amorphous layer extending beyond the alloy layer into the underlying silicon. In both cases, ion beam annealing results in epitaxial crystallization of the alloy layer. Results are reported for alloy composition in the range from Ge0.1Si0.9 to Ge 0.8Si0.2.

AB - GexSi1-x alloy layers grown on (100) silicon substrates by molecular beam epitaxy and amorphized by ion irradiation at -196°C are shown to recrystallize epitaxially during subsequent ion irradiation at 275°C. This ion beam annealing process has been examined for two different sample configurations: the first consisting of a thin amorphous layer extending from the surface to about half the thickness of the alloy layer, and the second consisting of a thick amorphous layer extending beyond the alloy layer into the underlying silicon. In both cases, ion beam annealing results in epitaxial crystallization of the alloy layer. Results are reported for alloy composition in the range from Ge0.1Si0.9 to Ge 0.8Si0.2.

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U2 - 10.1063/1.102264

DO - 10.1063/1.102264

M3 - Article

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VL - 55

SP - 843

EP - 845

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Ion beam induced epitaxial crystallization of Ge_xSi _1-x/Si structures

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