TY - JOUR
T1 - Ion-beam induced epitaxial crystallization of III-V compound semiconductors
AU - Ridgway, M. C.
AU - Johnson, S. T.
AU - Elliman, R. G.
PY - 1991/7/1
Y1 - 1991/7/1
N2 - Epitaxial recrystallization of amorphized mono- and multi-elemental semiconductors can be induced by MeV ion irradiation at temperatures where the rate of thermally induced recrystallization is negligible. For the present report, ion-beam annealing of InP and GaAs is compared. Amorphous surface layers of thickness ∼ 95 nm were formed by 50 keV Si ion implantation at a temperature of ∼ -196°C and epitaxial recrystallization was subsequently achieved with 1.5 MeV Si ion irradiation at 160°C. The extent of recrystallization was determined from Rutherford backscattering spectrometry/channeling and in-situ time-resolved reflectivity measurements. Residual disorder has been characterized with transmission electron microscopy. At a given irradiation temperature and MeV Si ion dose rate, significantly different modes of ion-beam induced recrystallization are apparent for InP and GaAs. For both materials, ion-beam annealing suppresses the onset of the twinned regrowth characteristic of thermal annealing, though the extent of single-crystalline regrowth is greater for InP. Microtwins and dislocations are observed in ion-beam annealed InP layers, but the size of the microtwins is reduced from that observed in thermally annealed samples. For GaAs, single-crystalline regrowth is apparent for only ∼ 20 nm following which a rapid ion-irradiation induced, amorphous-to-polycrystalline transformation is observed over the remaining ∼ 75 nm of material.
AB - Epitaxial recrystallization of amorphized mono- and multi-elemental semiconductors can be induced by MeV ion irradiation at temperatures where the rate of thermally induced recrystallization is negligible. For the present report, ion-beam annealing of InP and GaAs is compared. Amorphous surface layers of thickness ∼ 95 nm were formed by 50 keV Si ion implantation at a temperature of ∼ -196°C and epitaxial recrystallization was subsequently achieved with 1.5 MeV Si ion irradiation at 160°C. The extent of recrystallization was determined from Rutherford backscattering spectrometry/channeling and in-situ time-resolved reflectivity measurements. Residual disorder has been characterized with transmission electron microscopy. At a given irradiation temperature and MeV Si ion dose rate, significantly different modes of ion-beam induced recrystallization are apparent for InP and GaAs. For both materials, ion-beam annealing suppresses the onset of the twinned regrowth characteristic of thermal annealing, though the extent of single-crystalline regrowth is greater for InP. Microtwins and dislocations are observed in ion-beam annealed InP layers, but the size of the microtwins is reduced from that observed in thermally annealed samples. For GaAs, single-crystalline regrowth is apparent for only ∼ 20 nm following which a rapid ion-irradiation induced, amorphous-to-polycrystalline transformation is observed over the remaining ∼ 75 nm of material.
UR - http://www.scopus.com/inward/record.url?scp=4244102864&partnerID=8YFLogxK
U2 - 10.1016/0168-583X(91)95258-F
DO - 10.1016/0168-583X(91)95258-F
M3 - Article
AN - SCOPUS:4244102864
SN - 0168-583X
VL - 59-60
SP - 454
EP - 457
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
IS - PART 1
ER -