Ion beam induced epitaxial crystallization of NiSi2

M. C. Ridgway; R. G. Elliman; J. S. Williams

doi:10.1063/1.102989

Ion beam induced epitaxial crystallization of NiSi₂

M. C. Ridgway^*, R. G. Elliman, J. S. Williams

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Ion beam induced epitaxial crystallization of amorphous NiSi₂ is reported. Epitaxial NiSi₂ layers on (111) Si substrates were implanted at ∼-196 °C with low-energy Si ions to form an amorphous surface layer. The recrystallization of amorphous NiSi₂ was induced at 13-58 °C by irradiating with high-energy Si or Ne ions. Recrystallization proceeded in a layer-by-layer manner from the original amorphous/crystalline interface with an activation energy of 0.26±0.07 eV.

Original language	English
Pages (from-to)	2117-2119
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	21
DOIs	https://doi.org/10.1063/1.102989
Publication status	Published - 1990
Externally published	Yes

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10.1063/1.102989

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title = "Ion beam induced epitaxial crystallization of NiSi2",

abstract = "Ion beam induced epitaxial crystallization of amorphous NiSi2 is reported. Epitaxial NiSi2 layers on (111) Si substrates were implanted at ∼-196 °C with low-energy Si ions to form an amorphous surface layer. The recrystallization of amorphous NiSi2 was induced at 13-58 °C by irradiating with high-energy Si or Ne ions. Recrystallization proceeded in a layer-by-layer manner from the original amorphous/crystalline interface with an activation energy of 0.26±0.07 eV.",

author = "Ridgway, \{M. C.\} and Elliman, \{R. G.\} and Williams, \{J. S.\}",

year = "1990",

doi = "10.1063/1.102989",

language = "English",

volume = "56",

pages = "2117--2119",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

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T1 - Ion beam induced epitaxial crystallization of NiSi2

AU - Ridgway, M. C.

AU - Elliman, R. G.

AU - Williams, J. S.

PY - 1990

Y1 - 1990

N2 - Ion beam induced epitaxial crystallization of amorphous NiSi2 is reported. Epitaxial NiSi2 layers on (111) Si substrates were implanted at ∼-196 °C with low-energy Si ions to form an amorphous surface layer. The recrystallization of amorphous NiSi2 was induced at 13-58 °C by irradiating with high-energy Si or Ne ions. Recrystallization proceeded in a layer-by-layer manner from the original amorphous/crystalline interface with an activation energy of 0.26±0.07 eV.

AB - Ion beam induced epitaxial crystallization of amorphous NiSi2 is reported. Epitaxial NiSi2 layers on (111) Si substrates were implanted at ∼-196 °C with low-energy Si ions to form an amorphous surface layer. The recrystallization of amorphous NiSi2 was induced at 13-58 °C by irradiating with high-energy Si or Ne ions. Recrystallization proceeded in a layer-by-layer manner from the original amorphous/crystalline interface with an activation energy of 0.26±0.07 eV.

UR - https://www.scopus.com/pages/publications/4243082966

U2 - 10.1063/1.102989

DO - 10.1063/1.102989

M3 - Article

AN - SCOPUS:4243082966

SN - 0003-6951

VL - 56

SP - 2117

EP - 2119

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Ion beam induced epitaxial crystallization of NiSi2

Abstract

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Ion beam induced epitaxial crystallization of NiSi₂