Ion beam induced epitaxial crystallization of sapphire

W. Zhou; D. K. Sood; R. G. Elliman; M. C. Ridgway

doi:10.1016/0168-583X(93)90746-S

Ion beam induced epitaxial crystallization of sapphire

W. Zhou^*, D. K. Sood, R. G. Elliman, M. C. Ridgway

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The epitaxial recrystallization of an amorphous Al₂O₃ layer, formed by In ion implantation, on a crystalline substrate has been induced by high energy Si ion irradiation at a temperature as low as 400°C. At such a temperature, the rate of thermally induced recrystallization is negligible. The extent of crystallization of an amorphous layer and the redistribution of In atoms during ion beam induced epitaxial crystallization (IBIEC) have been compared with thermal annealing behaviour at 700°C. The most striking difference between the two annealing regimes are that IBIEC at low temperatures results in (1) more extensive epitaxy which is insensitive to the presence of In, and (2) negligible In redistribution.

Original language	English
Pages (from-to)	1104-1108
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	80-81
Issue number	PART 2
DOIs	https://doi.org/10.1016/0168-583X(93)90746-S
Publication status	Published - 1993

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@article{90dbe68196554bf2adcc17f563c9d704,

title = "Ion beam induced epitaxial crystallization of sapphire",

abstract = "The epitaxial recrystallization of an amorphous Al2O3 layer, formed by In ion implantation, on a crystalline substrate has been induced by high energy Si ion irradiation at a temperature as low as 400°C. At such a temperature, the rate of thermally induced recrystallization is negligible. The extent of crystallization of an amorphous layer and the redistribution of In atoms during ion beam induced epitaxial crystallization (IBIEC) have been compared with thermal annealing behaviour at 700°C. The most striking difference between the two annealing regimes are that IBIEC at low temperatures results in (1) more extensive epitaxy which is insensitive to the presence of In, and (2) negligible In redistribution.",

author = "W. Zhou and Sood, \{D. K.\} and Elliman, \{R. G.\} and Ridgway, \{M. C.\}",

year = "1993",

doi = "10.1016/0168-583X(93)90746-S",

language = "English",

volume = "80-81",

pages = "1104--1108",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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TY - JOUR

T1 - Ion beam induced epitaxial crystallization of sapphire

AU - Zhou, W.

AU - Sood, D. K.

AU - Elliman, R. G.

AU - Ridgway, M. C.

PY - 1993

Y1 - 1993

N2 - The epitaxial recrystallization of an amorphous Al2O3 layer, formed by In ion implantation, on a crystalline substrate has been induced by high energy Si ion irradiation at a temperature as low as 400°C. At such a temperature, the rate of thermally induced recrystallization is negligible. The extent of crystallization of an amorphous layer and the redistribution of In atoms during ion beam induced epitaxial crystallization (IBIEC) have been compared with thermal annealing behaviour at 700°C. The most striking difference between the two annealing regimes are that IBIEC at low temperatures results in (1) more extensive epitaxy which is insensitive to the presence of In, and (2) negligible In redistribution.

AB - The epitaxial recrystallization of an amorphous Al2O3 layer, formed by In ion implantation, on a crystalline substrate has been induced by high energy Si ion irradiation at a temperature as low as 400°C. At such a temperature, the rate of thermally induced recrystallization is negligible. The extent of crystallization of an amorphous layer and the redistribution of In atoms during ion beam induced epitaxial crystallization (IBIEC) have been compared with thermal annealing behaviour at 700°C. The most striking difference between the two annealing regimes are that IBIEC at low temperatures results in (1) more extensive epitaxy which is insensitive to the presence of In, and (2) negligible In redistribution.

UR - https://www.scopus.com/pages/publications/0041616364

U2 - 10.1016/0168-583X(93)90746-S

DO - 10.1016/0168-583X(93)90746-S

M3 - Article

AN - SCOPUS:0041616364

SN - 0168-583X

VL - 80-81

SP - 1104

EP - 1108

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - PART 2

ER -

Ion beam induced epitaxial crystallization of sapphire

Abstract

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