Ion-beam-induced epitaxy and interfacial segregation of Au in amorphous silicon

R. G. Elliman; D. C. Jacobson; J. Linnros; J. M. Poate

doi:10.1063/1.98454

Ion-beam-induced epitaxy and interfacial segregation of Au in amorphous silicon

R. G. Elliman^*, D. C. Jacobson, J. Linnros, J. M. Poate

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The segregation and diffusion of Au are examined during ion-beam-induced solid phase epitaxial crystallization of Au-implanted amorphous silicon layers. Epitaxy was induced at temperatures as low as 220°C by irradiation with 1.5 MeV Ar ions. At these temperatures Au is segregated to form a narrow layer at the moving crystal/amorphous interface. The size of the segregated layer depends on the velocity of the interface compared to the Au diffusivity in amorphous Si. The growth rate for ion-beam-induced epitaxy is found to be independent of Au concentration and near-complete epitaxial crystallization of the amorphous layers can be achieved, even for Au concentrations ∼2 at. %.

Original language	English
Pages (from-to)	314-316
Number of pages	3
Journal	Applied Physics Letters
Volume	51
Issue number	5
DOIs	https://doi.org/10.1063/1.98454
Publication status	Published - 1987
Externally published	Yes

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title = "Ion-beam-induced epitaxy and interfacial segregation of Au in amorphous silicon",

abstract = "The segregation and diffusion of Au are examined during ion-beam-induced solid phase epitaxial crystallization of Au-implanted amorphous silicon layers. Epitaxy was induced at temperatures as low as 220°C by irradiation with 1.5 MeV Ar ions. At these temperatures Au is segregated to form a narrow layer at the moving crystal/amorphous interface. The size of the segregated layer depends on the velocity of the interface compared to the Au diffusivity in amorphous Si. The growth rate for ion-beam-induced epitaxy is found to be independent of Au concentration and near-complete epitaxial crystallization of the amorphous layers can be achieved, even for Au concentrations ∼2 at. \%.",

author = "Elliman, \{R. G.\} and Jacobson, \{D. C.\} and J. Linnros and Poate, \{J. M.\}",

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doi = "10.1063/1.98454",

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journal = "Applied Physics Letters",

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AU - Elliman, R. G.

AU - Jacobson, D. C.

AU - Linnros, J.

AU - Poate, J. M.

PY - 1987

Y1 - 1987

N2 - The segregation and diffusion of Au are examined during ion-beam-induced solid phase epitaxial crystallization of Au-implanted amorphous silicon layers. Epitaxy was induced at temperatures as low as 220°C by irradiation with 1.5 MeV Ar ions. At these temperatures Au is segregated to form a narrow layer at the moving crystal/amorphous interface. The size of the segregated layer depends on the velocity of the interface compared to the Au diffusivity in amorphous Si. The growth rate for ion-beam-induced epitaxy is found to be independent of Au concentration and near-complete epitaxial crystallization of the amorphous layers can be achieved, even for Au concentrations ∼2 at. %.

AB - The segregation and diffusion of Au are examined during ion-beam-induced solid phase epitaxial crystallization of Au-implanted amorphous silicon layers. Epitaxy was induced at temperatures as low as 220°C by irradiation with 1.5 MeV Ar ions. At these temperatures Au is segregated to form a narrow layer at the moving crystal/amorphous interface. The size of the segregated layer depends on the velocity of the interface compared to the Au diffusivity in amorphous Si. The growth rate for ion-beam-induced epitaxy is found to be independent of Au concentration and near-complete epitaxial crystallization of the amorphous layers can be achieved, even for Au concentrations ∼2 at. %.

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VL - 51

SP - 314

EP - 316

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Ion-beam-induced epitaxy and interfacial segregation of Au in amorphous silicon

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