Ion beam induced epitaxy of (100) and (111) GaAs

S. T. Johnson; R. G. Elliman; J. S. Williams

doi:10.1016/0168-583X(89)90823-9

Ion beam induced epitaxy of (100) and (111) GaAs

S. T. Johnson^*, R. G. Elliman, J. S. Williams

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Ion implanted amorphous layers on GaAs substrates of both (100) and (111) orientation were subjected to ion beam induced epitaxial crystallization at temperatures between 75 ° C and 165 ° C using 1.5 MeV Ne⁺ ions. For (100) GaAs a linear growth rate with Ne fluence is observed at low ( < 100° C) temperatures and this contrasts with non linear behaviour observed at higher (∼150° C) temperatures. In the low temperature regime, ion beam induced regrowth proceeds linearly beyond thicknesses which can be successfully regrown by a conventional 270° C furnace anneal. For (111) GaAs, ion beam induced crystallization proceeds faster than for (100) GaAs but the growth rate is non linear at low temperatures. The IBIEC regrowth rate behaviour of (111) GaAs is also shown to exhibit anomalous behaviour compared to that observed during thermal annealing.

Original language	English
Pages (from-to)	449-452
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	39
Issue number	1-4
DOIs	https://doi.org/10.1016/0168-583X(89)90823-9
Publication status	Published - 2 Mar 1989
Externally published	Yes

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title = "Ion beam induced epitaxy of (100) and (111) GaAs",

abstract = "Ion implanted amorphous layers on GaAs substrates of both (100) and (111) orientation were subjected to ion beam induced epitaxial crystallization at temperatures between 75 ° C and 165 ° C using 1.5 MeV Ne+ ions. For (100) GaAs a linear growth rate with Ne fluence is observed at low ( < 100° C) temperatures and this contrasts with non linear behaviour observed at higher (∼150° C) temperatures. In the low temperature regime, ion beam induced regrowth proceeds linearly beyond thicknesses which can be successfully regrown by a conventional 270° C furnace anneal. For (111) GaAs, ion beam induced crystallization proceeds faster than for (100) GaAs but the growth rate is non linear at low temperatures. The IBIEC regrowth rate behaviour of (111) GaAs is also shown to exhibit anomalous behaviour compared to that observed during thermal annealing.",

author = "Johnson, {S. T.} and Elliman, {R. G.} and Williams, {J. S.}",

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T1 - Ion beam induced epitaxy of (100) and (111) GaAs

AU - Johnson, S. T.

AU - Elliman, R. G.

AU - Williams, J. S.

PY - 1989/3/2

Y1 - 1989/3/2

N2 - Ion implanted amorphous layers on GaAs substrates of both (100) and (111) orientation were subjected to ion beam induced epitaxial crystallization at temperatures between 75 ° C and 165 ° C using 1.5 MeV Ne+ ions. For (100) GaAs a linear growth rate with Ne fluence is observed at low ( < 100° C) temperatures and this contrasts with non linear behaviour observed at higher (∼150° C) temperatures. In the low temperature regime, ion beam induced regrowth proceeds linearly beyond thicknesses which can be successfully regrown by a conventional 270° C furnace anneal. For (111) GaAs, ion beam induced crystallization proceeds faster than for (100) GaAs but the growth rate is non linear at low temperatures. The IBIEC regrowth rate behaviour of (111) GaAs is also shown to exhibit anomalous behaviour compared to that observed during thermal annealing.

AB - Ion implanted amorphous layers on GaAs substrates of both (100) and (111) orientation were subjected to ion beam induced epitaxial crystallization at temperatures between 75 ° C and 165 ° C using 1.5 MeV Ne+ ions. For (100) GaAs a linear growth rate with Ne fluence is observed at low ( < 100° C) temperatures and this contrasts with non linear behaviour observed at higher (∼150° C) temperatures. In the low temperature regime, ion beam induced regrowth proceeds linearly beyond thicknesses which can be successfully regrown by a conventional 270° C furnace anneal. For (111) GaAs, ion beam induced crystallization proceeds faster than for (100) GaAs but the growth rate is non linear at low temperatures. The IBIEC regrowth rate behaviour of (111) GaAs is also shown to exhibit anomalous behaviour compared to that observed during thermal annealing.

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DO - 10.1016/0168-583X(89)90823-9

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

Ion beam induced epitaxy of (100) and (111) GaAs

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