Ion-beam-induced porosity of GaN

S. O. Kucheyev; J. S. Williams; C. Jagadish; J. Zou; V. S.J. Craig; G. Li

doi:10.1063/1.1290722

Ion-beam-induced porosity of GaN

S. O. Kucheyev^*, J. S. Williams, C. Jagadish, J. Zou, V. S.J. Craig, G. Li

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

78 Citations (Scopus)

Abstract

Wurtzite GaN films bombarded with heavy ions (¹⁹⁷Au⁺) show anomalous swelling of the implanted region with corresponding volume expansion up to ∼50%. Results show that this phenomenon is due to the formation of a porous layer of amorphous GaN. An important implication of this study for the fabrication of GaN-based devices is that amorphization of GaN should be avoided during ion implantation.

Original language	English
Pages (from-to)	1455-1457
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	10
DOIs	https://doi.org/10.1063/1.1290722
Publication status	Published - 4 Sept 2000

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title = "Ion-beam-induced porosity of GaN",

abstract = "Wurtzite GaN films bombarded with heavy ions (197Au+) show anomalous swelling of the implanted region with corresponding volume expansion up to ∼50%. Results show that this phenomenon is due to the formation of a porous layer of amorphous GaN. An important implication of this study for the fabrication of GaN-based devices is that amorphization of GaN should be avoided during ion implantation.",

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AU - Jagadish, C.

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AU - Craig, V. S.J.

AU - Li, G.

PY - 2000/9/4

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N2 - Wurtzite GaN films bombarded with heavy ions (197Au+) show anomalous swelling of the implanted region with corresponding volume expansion up to ∼50%. Results show that this phenomenon is due to the formation of a porous layer of amorphous GaN. An important implication of this study for the fabrication of GaN-based devices is that amorphization of GaN should be avoided during ion implantation.

AB - Wurtzite GaN films bombarded with heavy ions (197Au+) show anomalous swelling of the implanted region with corresponding volume expansion up to ∼50%. Results show that this phenomenon is due to the formation of a porous layer of amorphous GaN. An important implication of this study for the fabrication of GaN-based devices is that amorphization of GaN should be avoided during ion implantation.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

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Ion-beam-induced porosity of GaN

Abstract

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