Ion-beam-induced porosity of GaN

S. O. Kucheyev; J. S. Williams; C. Jagadish; J. Zou; V. S.J. Craig; G. Li

doi:10.1063/1.1290722

Ion-beam-induced porosity of GaN

S. O. Kucheyev^*, J. S. Williams, C. Jagadish, J. Zou, V. S.J. Craig, G. Li

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

81 Citations (Scopus)

Abstract

Wurtzite GaN films bombarded with heavy ions (¹⁹⁷Au⁺) show anomalous swelling of the implanted region with corresponding volume expansion up to ∼50%. Results show that this phenomenon is due to the formation of a porous layer of amorphous GaN. An important implication of this study for the fabrication of GaN-based devices is that amorphization of GaN should be avoided during ion implantation.

Original language	English
Pages (from-to)	1455-1457
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	10
DOIs	https://doi.org/10.1063/1.1290722
Publication status	Published - 4 Sept 2000

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title = "Ion-beam-induced porosity of GaN",

abstract = "Wurtzite GaN films bombarded with heavy ions (197Au+) show anomalous swelling of the implanted region with corresponding volume expansion up to ∼50\%. Results show that this phenomenon is due to the formation of a porous layer of amorphous GaN. An important implication of this study for the fabrication of GaN-based devices is that amorphization of GaN should be avoided during ion implantation.",

author = "Kucheyev, \{S. O.\} and Williams, \{J. S.\} and C. Jagadish and J. Zou and Craig, \{V. S.J.\} and G. Li",

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AU - Kucheyev, S. O.

AU - Williams, J. S.

AU - Jagadish, C.

AU - Zou, J.

AU - Craig, V. S.J.

AU - Li, G.

PY - 2000/9/4

Y1 - 2000/9/4

N2 - Wurtzite GaN films bombarded with heavy ions (197Au+) show anomalous swelling of the implanted region with corresponding volume expansion up to ∼50%. Results show that this phenomenon is due to the formation of a porous layer of amorphous GaN. An important implication of this study for the fabrication of GaN-based devices is that amorphization of GaN should be avoided during ion implantation.

AB - Wurtzite GaN films bombarded with heavy ions (197Au+) show anomalous swelling of the implanted region with corresponding volume expansion up to ∼50%. Results show that this phenomenon is due to the formation of a porous layer of amorphous GaN. An important implication of this study for the fabrication of GaN-based devices is that amorphization of GaN should be avoided during ion implantation.

UR - https://www.scopus.com/pages/publications/0000817470

U2 - 10.1063/1.1290722

DO - 10.1063/1.1290722

M3 - Article

SN - 0003-6951

VL - 77

SP - 1455

EP - 1457

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Ion-beam-induced porosity of GaN

Abstract

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