Ion-beam induced relaxation of strained GexSi1-x layers

P. Kringhøj; J. M. Glasko; R. G. Elliman

doi:10.1016/0168-583X(94)00499-4

Ion-beam induced relaxation of strained Ge_xSi_1-x layers

P. Kringhøj, J. M. Glasko, R. G. Elliman^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The effect of ion irradiation on the strain in Ge_xSi_1-x strained layers is examined as a function of ion-fluence and irradiation temperature. It is shown that irradiation at room temperature causes an increase in the perpendicular strain whereas irradiation at elevated temperatures causes a decrease in the perpendicular strain. In both cases, subsequent thermal annealing reduces the damage induced component of the strain. This behaviour is discussed in terms of the nature of the radiation damage produced in the different temperature regimes.

Original language	English
Pages (from-to)	276-280
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	96
Issue number	1-2
DOIs	https://doi.org/10.1016/0168-583X(94)00499-4
Publication status	Published - 1 Mar 1995

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abstract = "The effect of ion irradiation on the strain in GexSi1-x strained layers is examined as a function of ion-fluence and irradiation temperature. It is shown that irradiation at room temperature causes an increase in the perpendicular strain whereas irradiation at elevated temperatures causes a decrease in the perpendicular strain. In both cases, subsequent thermal annealing reduces the damage induced component of the strain. This behaviour is discussed in terms of the nature of the radiation damage produced in the different temperature regimes.",

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AU - Elliman, R. G.

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N2 - The effect of ion irradiation on the strain in GexSi1-x strained layers is examined as a function of ion-fluence and irradiation temperature. It is shown that irradiation at room temperature causes an increase in the perpendicular strain whereas irradiation at elevated temperatures causes a decrease in the perpendicular strain. In both cases, subsequent thermal annealing reduces the damage induced component of the strain. This behaviour is discussed in terms of the nature of the radiation damage produced in the different temperature regimes.

AB - The effect of ion irradiation on the strain in GexSi1-x strained layers is examined as a function of ion-fluence and irradiation temperature. It is shown that irradiation at room temperature causes an increase in the perpendicular strain whereas irradiation at elevated temperatures causes a decrease in the perpendicular strain. In both cases, subsequent thermal annealing reduces the damage induced component of the strain. This behaviour is discussed in terms of the nature of the radiation damage produced in the different temperature regimes.

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SN - 0168-583X

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2

ER -

Ion-beam induced relaxation of strained Ge_xSi_1-x layers

Abstract

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