Ion-beam-produced damage and its stability in AlN films

S. O. Kucheyev; J. S. Williams; J. Zou; C. Jagadish; M. Pophristic; S. Guo; I. T. Ferguson; M. O. Manasreh

doi:10.1063/1.1501746

Ion-beam-produced damage and its stability in AlN films

S. O. Kucheyev^*, J. S. Williams, J. Zou, C. Jagadish, M. Pophristic, S. Guo, I. T. Ferguson, M. O. Manasreh

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

64 Citations (Scopus)

Abstract

Structural characteristics of single-crystal wurtzite AlN epilayers (grown on sapphire substrates) bombarded with 300 keV ¹⁹⁷Au ⁺ ions at room and liquid-nitrogen temperatures (RT and LN ₂) are studied by a combination of Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy. Results reveal extremely strong dynamic annealing of ion-beam-generated defects in AlN. Lattice amorphization is not observed even for very large doses of keV heavy ions at LN ₂. An increase in irradiation temperature from LN ₂ to RT has a relatively small effect on the production of stable structural damage in AlN. In contrast to the case of Al _xGa _1-xN with x≤0.6, neither damage saturation in the crystal bulk (below the random level) nor preferential surface disordering is revealed for AlN. Results also show that structural lattice disorder produced in AlN by high-dose keV heavy-ion bombardment is stable to rapid thermal annealing at temperatures as high as 1000°C.

Original language	English
Pages (from-to)	3554-3558
Number of pages	5
Journal	Journal of Applied Physics
Volume	92
Issue number	7
DOIs	https://doi.org/10.1063/1.1501746
Publication status	Published - 1 Oct 2002

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title = "Ion-beam-produced damage and its stability in AlN films",

abstract = "Structural characteristics of single-crystal wurtzite AlN epilayers (grown on sapphire substrates) bombarded with 300 keV 197Au + ions at room and liquid-nitrogen temperatures (RT and LN 2) are studied by a combination of Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy. Results reveal extremely strong dynamic annealing of ion-beam-generated defects in AlN. Lattice amorphization is not observed even for very large doses of keV heavy ions at LN 2. An increase in irradiation temperature from LN 2 to RT has a relatively small effect on the production of stable structural damage in AlN. In contrast to the case of Al xGa 1-xN with x≤0.6, neither damage saturation in the crystal bulk (below the random level) nor preferential surface disordering is revealed for AlN. Results also show that structural lattice disorder produced in AlN by high-dose keV heavy-ion bombardment is stable to rapid thermal annealing at temperatures as high as 1000°C.",

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AU - Kucheyev, S. O.

AU - Williams, J. S.

AU - Zou, J.

AU - Jagadish, C.

AU - Pophristic, M.

AU - Guo, S.

AU - Ferguson, I. T.

AU - Manasreh, M. O.

PY - 2002/10/1

Y1 - 2002/10/1

N2 - Structural characteristics of single-crystal wurtzite AlN epilayers (grown on sapphire substrates) bombarded with 300 keV 197Au + ions at room and liquid-nitrogen temperatures (RT and LN 2) are studied by a combination of Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy. Results reveal extremely strong dynamic annealing of ion-beam-generated defects in AlN. Lattice amorphization is not observed even for very large doses of keV heavy ions at LN 2. An increase in irradiation temperature from LN 2 to RT has a relatively small effect on the production of stable structural damage in AlN. In contrast to the case of Al xGa 1-xN with x≤0.6, neither damage saturation in the crystal bulk (below the random level) nor preferential surface disordering is revealed for AlN. Results also show that structural lattice disorder produced in AlN by high-dose keV heavy-ion bombardment is stable to rapid thermal annealing at temperatures as high as 1000°C.

AB - Structural characteristics of single-crystal wurtzite AlN epilayers (grown on sapphire substrates) bombarded with 300 keV 197Au + ions at room and liquid-nitrogen temperatures (RT and LN 2) are studied by a combination of Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy. Results reveal extremely strong dynamic annealing of ion-beam-generated defects in AlN. Lattice amorphization is not observed even for very large doses of keV heavy ions at LN 2. An increase in irradiation temperature from LN 2 to RT has a relatively small effect on the production of stable structural damage in AlN. In contrast to the case of Al xGa 1-xN with x≤0.6, neither damage saturation in the crystal bulk (below the random level) nor preferential surface disordering is revealed for AlN. Results also show that structural lattice disorder produced in AlN by high-dose keV heavy-ion bombardment is stable to rapid thermal annealing at temperatures as high as 1000°C.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Ion-beam-produced damage and its stability in AlN films

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