Abstract
Optically-active silica nanowires are produced by metal-induced growth on silicon substrates using ion-implantation, with two different strategies employed for their fabrication. The first is based on Er implantation of nanowires produced by a thin-film Pd catalyst layer, and the second employing implanted Er as both the catalyst and dopant. The luminescence properties of the resulting Er-doped silica nanowires are reported and compared with similarly implanted fused silica samples. Comparison shows that the luminescence lifetime of Er is increased by incorporation within the nanowires due to a reduction in the density of available optical states in these structures. Additional details of the synthesis, structure and properties of these functionalised nanowires are also presented.
Original language | English |
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Pages (from-to) | 1362-1366 |
Number of pages | 5 |
Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 266 |
Issue number | 8 |
DOIs | |
Publication status | Published - Apr 2008 |