Ion-beam synthesis and thermal stability of highly tin-concentrated germanium – tin alloys

Tuan T. Tran; Hemi H. Gandhi; David Pastor; Michael J. Aziz; J. S. Williams

doi:10.1016/j.mssp.2016.10.049

Ion-beam synthesis and thermal stability of highly tin-concentrated germanium – tin alloys

Tuan T. Tran^*, Hemi H. Gandhi, David Pastor, Michael J. Aziz, J. S. Williams

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A 9 at% Sn Ge-Sn alloy of good crystalline quality has been achieved by ion implantation followed by pulsed laser melting and resolidification. The concentration and crystallinity of the alloys are fully characterised by Rutherford backscattering spectrometry, X-ray diffraction, transmission electron microscopy and Raman spectroscopy. At high Sn concentrations, oxygen intermixing from a capping oxide layer, which is used to prevent ion-beam induced porosity, can interfere with the solidification process and compromise overall crystal quality. This indicates that the near surface layer containing oxygen after ion implantation must be removed before pulsed laser melting in order to obtain good crystal quality. The alloy's crystallinity is thermally stable under annealing up to 400℃ for 30min. This thermal budget is comparable to that of Ge-Sn produced by conventional MBE or CVD methods and suitable for subsequent device fabrication and post-processing.

Original language	English
Pages (from-to)	192-195
Number of pages	4
Journal	Materials Science in Semiconductor Processing
Volume	62
DOIs	https://doi.org/10.1016/j.mssp.2016.10.049
Publication status	Published - 1 May 2017

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10.1016/j.mssp.2016.10.049

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@article{d6c7580912d44e08862825a5a2842173,

title = "Ion-beam synthesis and thermal stability of highly tin-concentrated germanium – tin alloys",

abstract = "A 9 at% Sn Ge-Sn alloy of good crystalline quality has been achieved by ion implantation followed by pulsed laser melting and resolidification. The concentration and crystallinity of the alloys are fully characterised by Rutherford backscattering spectrometry, X-ray diffraction, transmission electron microscopy and Raman spectroscopy. At high Sn concentrations, oxygen intermixing from a capping oxide layer, which is used to prevent ion-beam induced porosity, can interfere with the solidification process and compromise overall crystal quality. This indicates that the near surface layer containing oxygen after ion implantation must be removed before pulsed laser melting in order to obtain good crystal quality. The alloy's crystallinity is thermally stable under annealing up to 400℃ for 30min. This thermal budget is comparable to that of Ge-Sn produced by conventional MBE or CVD methods and suitable for subsequent device fabrication and post-processing.",

keywords = "Direct bandgap group IV alloys, Germanium-tin alloys, Ion implantation, Semiconductor processing",

author = "Tran, {Tuan T.} and Gandhi, {Hemi H.} and David Pastor and Aziz, {Michael J.} and Williams, {J. S.}",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd",

year = "2017",

month = may,

day = "1",

doi = "10.1016/j.mssp.2016.10.049",

language = "English",

volume = "62",

pages = "192--195",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Ltd.",

}

TY - JOUR

T1 - Ion-beam synthesis and thermal stability of highly tin-concentrated germanium – tin alloys

AU - Tran, Tuan T.

AU - Gandhi, Hemi H.

AU - Pastor, David

AU - Aziz, Michael J.

AU - Williams, J. S.

PY - 2017/5/1

Y1 - 2017/5/1

N2 - A 9 at% Sn Ge-Sn alloy of good crystalline quality has been achieved by ion implantation followed by pulsed laser melting and resolidification. The concentration and crystallinity of the alloys are fully characterised by Rutherford backscattering spectrometry, X-ray diffraction, transmission electron microscopy and Raman spectroscopy. At high Sn concentrations, oxygen intermixing from a capping oxide layer, which is used to prevent ion-beam induced porosity, can interfere with the solidification process and compromise overall crystal quality. This indicates that the near surface layer containing oxygen after ion implantation must be removed before pulsed laser melting in order to obtain good crystal quality. The alloy's crystallinity is thermally stable under annealing up to 400℃ for 30min. This thermal budget is comparable to that of Ge-Sn produced by conventional MBE or CVD methods and suitable for subsequent device fabrication and post-processing.

AB - A 9 at% Sn Ge-Sn alloy of good crystalline quality has been achieved by ion implantation followed by pulsed laser melting and resolidification. The concentration and crystallinity of the alloys are fully characterised by Rutherford backscattering spectrometry, X-ray diffraction, transmission electron microscopy and Raman spectroscopy. At high Sn concentrations, oxygen intermixing from a capping oxide layer, which is used to prevent ion-beam induced porosity, can interfere with the solidification process and compromise overall crystal quality. This indicates that the near surface layer containing oxygen after ion implantation must be removed before pulsed laser melting in order to obtain good crystal quality. The alloy's crystallinity is thermally stable under annealing up to 400℃ for 30min. This thermal budget is comparable to that of Ge-Sn produced by conventional MBE or CVD methods and suitable for subsequent device fabrication and post-processing.

KW - Direct bandgap group IV alloys

KW - Germanium-tin alloys

KW - Ion implantation

KW - Semiconductor processing

UR - http://www.scopus.com/inward/record.url?scp=85006313105&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2016.10.049

DO - 10.1016/j.mssp.2016.10.049

M3 - Article

SN - 1369-8001

VL - 62

SP - 192

EP - 195

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

ER -

Ion-beam synthesis and thermal stability of highly tin-concentrated germanium – tin alloys

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