Ion implantation damage in InP

Tong He Zhang; R. G. Elliman; G. Carter

doi:10.1016/0167-5087(83)90880-3

Ion implantation damage in InP

Tong He Zhang^*, R. G. Elliman, G. Carter

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The disorder generated by 40 keV light (N⁺) and heavy (Bi⁺) ion irradiation of InP at 40 K and room temperature has been measured, using Rutherford backscattering channeling techniques, as a function of ion flux density and fluence. For the light ion irradiation the damage retained in the substrate is highly dependent upon irradiation temperature and upon flux density for room temperature irradiation. Such dependencies are much weaker for heavy ion irradiation. These results, together with the fluence dependence of disorder, are consistent with a mainly direct impact amorphisation, stable against annealing, process with heavy ion implantation and a mainly simpler defect generation, unstable against annealing, process with light ion implantation. Studies of disorder generation in both the In and P sublattices are also discussed.

Original language	English
Pages (from-to)	761-766
Number of pages	6
Journal	Nuclear Instruments and Methods In Physics Research
Volume	209-210
Issue number	PART 2
DOIs	https://doi.org/10.1016/0167-5087(83)90880-3
Publication status	Published - 1983
Externally published	Yes

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@article{087e99a38fb5417895bf4aeea6eecd83,

title = "Ion implantation damage in InP",

abstract = "The disorder generated by 40 keV light (N+) and heavy (Bi+) ion irradiation of InP at 40 K and room temperature has been measured, using Rutherford backscattering channeling techniques, as a function of ion flux density and fluence. For the light ion irradiation the damage retained in the substrate is highly dependent upon irradiation temperature and upon flux density for room temperature irradiation. Such dependencies are much weaker for heavy ion irradiation. These results, together with the fluence dependence of disorder, are consistent with a mainly direct impact amorphisation, stable against annealing, process with heavy ion implantation and a mainly simpler defect generation, unstable against annealing, process with light ion implantation. Studies of disorder generation in both the In and P sublattices are also discussed.",

author = "Zhang, {Tong He} and Elliman, {R. G.} and G. Carter",

year = "1983",

doi = "10.1016/0167-5087(83)90880-3",

language = "English",

volume = "209-210",

pages = "761--766",

journal = "Nuclear Instruments and Methods In Physics Research",

issn = "0167-5087",

publisher = "North-Holland Publ Co",

number = "PART 2",

}

TY - JOUR

T1 - Ion implantation damage in InP

AU - Zhang, Tong He

AU - Elliman, R. G.

AU - Carter, G.

PY - 1983

Y1 - 1983

N2 - The disorder generated by 40 keV light (N+) and heavy (Bi+) ion irradiation of InP at 40 K and room temperature has been measured, using Rutherford backscattering channeling techniques, as a function of ion flux density and fluence. For the light ion irradiation the damage retained in the substrate is highly dependent upon irradiation temperature and upon flux density for room temperature irradiation. Such dependencies are much weaker for heavy ion irradiation. These results, together with the fluence dependence of disorder, are consistent with a mainly direct impact amorphisation, stable against annealing, process with heavy ion implantation and a mainly simpler defect generation, unstable against annealing, process with light ion implantation. Studies of disorder generation in both the In and P sublattices are also discussed.

AB - The disorder generated by 40 keV light (N+) and heavy (Bi+) ion irradiation of InP at 40 K and room temperature has been measured, using Rutherford backscattering channeling techniques, as a function of ion flux density and fluence. For the light ion irradiation the damage retained in the substrate is highly dependent upon irradiation temperature and upon flux density for room temperature irradiation. Such dependencies are much weaker for heavy ion irradiation. These results, together with the fluence dependence of disorder, are consistent with a mainly direct impact amorphisation, stable against annealing, process with heavy ion implantation and a mainly simpler defect generation, unstable against annealing, process with light ion implantation. Studies of disorder generation in both the In and P sublattices are also discussed.

UR - http://www.scopus.com/inward/record.url?scp=0020126385&partnerID=8YFLogxK

U2 - 10.1016/0167-5087(83)90880-3

DO - 10.1016/0167-5087(83)90880-3

M3 - Article

AN - SCOPUS:0020126385

SN - 0167-5087

VL - 209-210

SP - 761

EP - 766

JO - Nuclear Instruments and Methods In Physics Research

JF - Nuclear Instruments and Methods In Physics Research

IS - PART 2

ER -

Ion implantation damage in InP

Abstract

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