Ion-implantation in SiC and GaN

N. Papanicolaou; M. V. Rao; B. Molnar; J. Tucker; A. Edwards; O. W. Holland; M. C. Ridgway

doi:10.1016/S0168-583X(98)00880-5

Ion-implantation in SiC and GaN

N. Papanicolaou, M. V. Rao^*, B. Molnar, J. Tucker, A. Edwards, O. W. Holland, M. C. Ridgway

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The electrical activation behavior of N- and Al-implantations in bulk V-doped semi-insulating 4H-SiC is similar to that in 4H-SiC epitaxial layers. The As- and Sb-implantations in p-type 6H-SiC epitaxial layers showed out-diffusion behavior with room-temperature sheet carrier concentrations of <20% of the implanted dose. In n-type GaN, compensating levels introduced by the high-dose implantation damage are thermally stable even at 1150°C annealing.

Original language	English
Pages (from-to)	416-420
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	148
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(98)00880-5
Publication status	Published - 1999

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@article{33f7269d68dc4339a323489b3718ec70,

title = "Ion-implantation in SiC and GaN",

abstract = "The electrical activation behavior of N- and Al-implantations in bulk V-doped semi-insulating 4H-SiC is similar to that in 4H-SiC epitaxial layers. The As- and Sb-implantations in p-type 6H-SiC epitaxial layers showed out-diffusion behavior with room-temperature sheet carrier concentrations of <20\% of the implanted dose. In n-type GaN, compensating levels introduced by the high-dose implantation damage are thermally stable even at 1150°C annealing.",

keywords = "Activation, Annealing, GaN, Implantation, SiC",

author = "N. Papanicolaou and Rao, \{M. V.\} and B. Molnar and J. Tucker and A. Edwards and Holland, \{O. W.\} and Ridgway, \{M. C.\}",

year = "1999",

doi = "10.1016/S0168-583X(98)00880-5",

language = "English",

volume = "148",

pages = "416--420",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Ion-implantation in SiC and GaN

AU - Papanicolaou, N.

AU - Rao, M. V.

AU - Molnar, B.

AU - Tucker, J.

AU - Edwards, A.

AU - Holland, O. W.

AU - Ridgway, M. C.

PY - 1999

Y1 - 1999

N2 - The electrical activation behavior of N- and Al-implantations in bulk V-doped semi-insulating 4H-SiC is similar to that in 4H-SiC epitaxial layers. The As- and Sb-implantations in p-type 6H-SiC epitaxial layers showed out-diffusion behavior with room-temperature sheet carrier concentrations of <20% of the implanted dose. In n-type GaN, compensating levels introduced by the high-dose implantation damage are thermally stable even at 1150°C annealing.

AB - The electrical activation behavior of N- and Al-implantations in bulk V-doped semi-insulating 4H-SiC is similar to that in 4H-SiC epitaxial layers. The As- and Sb-implantations in p-type 6H-SiC epitaxial layers showed out-diffusion behavior with room-temperature sheet carrier concentrations of <20% of the implanted dose. In n-type GaN, compensating levels introduced by the high-dose implantation damage are thermally stable even at 1150°C annealing.

KW - Activation

KW - Annealing

KW - GaN

KW - Implantation

KW - SiC

UR - https://www.scopus.com/pages/publications/0033513778

U2 - 10.1016/S0168-583X(98)00880-5

DO - 10.1016/S0168-583X(98)00880-5

M3 - Article

SN - 0168-583X

VL - 148

SP - 416

EP - 420

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

Ion-implantation in SiC and GaN

Abstract

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