Ion implantation induced defects in ZnO

L. Vines; J. Wong-Leung; C. Jagadish; E. V. Monakhov; B. G. Svensson

doi:10.1016/j.physb.2011.09.066

Ion implantation induced defects in ZnO

L. Vines^*, J. Wong-Leung, C. Jagadish, E. V. Monakhov, B. G. Svensson

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

N-type ZnO single crystals have been implanted with 500 keV O and 1.2 MeV Zn ions using doses between 1×10 ¹¹ and 2×10 ¹²cm- ², and the generation of deep-level defects in the upper part of the band gap has been studied by capacitancevoltage (CV) and deep level transient spectroscopy (DLTS) performed up to sample temperatures of 500 K. At least three implantation-related deep defects are observed by DLTS, with activation energies of 0.57, 0.97 and 1.2 eV below the conduction band edge. The generation of the two latter levels is pronounced in the reported samples, while the former has lower generation rate for O and Zn implantations compared to electrons and light ion irradiation. Moreover, a dramatic change in the depth distribution of charge carriers is observed, indicating acceptor generation or donor migration at or below 400 K.

Original language	English
Pages (from-to)	1481-1484
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	407
Issue number	10
DOIs	https://doi.org/10.1016/j.physb.2011.09.066
Publication status	Published - 15 May 2012

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title = "Ion implantation induced defects in ZnO",

abstract = "N-type ZnO single crystals have been implanted with 500 keV O and 1.2 MeV Zn ions using doses between 1×10 11 and 2×10 12cm- 2, and the generation of deep-level defects in the upper part of the band gap has been studied by capacitancevoltage (CV) and deep level transient spectroscopy (DLTS) performed up to sample temperatures of 500 K. At least three implantation-related deep defects are observed by DLTS, with activation energies of 0.57, 0.97 and 1.2 eV below the conduction band edge. The generation of the two latter levels is pronounced in the reported samples, while the former has lower generation rate for O and Zn implantations compared to electrons and light ion irradiation. Moreover, a dramatic change in the depth distribution of charge carriers is observed, indicating acceptor generation or donor migration at or below 400 K.",

keywords = "Deep energy levels, IIVI semiconductors, Ion radiation effects, Point defects and defect clusters",

author = "L. Vines and J. Wong-Leung and C. Jagadish and Monakhov, {E. V.} and Svensson, {B. G.}",

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TY - JOUR

T1 - Ion implantation induced defects in ZnO

AU - Vines, L.

AU - Wong-Leung, J.

AU - Jagadish, C.

AU - Monakhov, E. V.

AU - Svensson, B. G.

PY - 2012/5/15

Y1 - 2012/5/15

N2 - N-type ZnO single crystals have been implanted with 500 keV O and 1.2 MeV Zn ions using doses between 1×10 11 and 2×10 12cm- 2, and the generation of deep-level defects in the upper part of the band gap has been studied by capacitancevoltage (CV) and deep level transient spectroscopy (DLTS) performed up to sample temperatures of 500 K. At least three implantation-related deep defects are observed by DLTS, with activation energies of 0.57, 0.97 and 1.2 eV below the conduction band edge. The generation of the two latter levels is pronounced in the reported samples, while the former has lower generation rate for O and Zn implantations compared to electrons and light ion irradiation. Moreover, a dramatic change in the depth distribution of charge carriers is observed, indicating acceptor generation or donor migration at or below 400 K.

AB - N-type ZnO single crystals have been implanted with 500 keV O and 1.2 MeV Zn ions using doses between 1×10 11 and 2×10 12cm- 2, and the generation of deep-level defects in the upper part of the band gap has been studied by capacitancevoltage (CV) and deep level transient spectroscopy (DLTS) performed up to sample temperatures of 500 K. At least three implantation-related deep defects are observed by DLTS, with activation energies of 0.57, 0.97 and 1.2 eV below the conduction band edge. The generation of the two latter levels is pronounced in the reported samples, while the former has lower generation rate for O and Zn implantations compared to electrons and light ion irradiation. Moreover, a dramatic change in the depth distribution of charge carriers is observed, indicating acceptor generation or donor migration at or below 400 K.

KW - Deep energy levels

KW - IIVI semiconductors

KW - Ion radiation effects

KW - Point defects and defect clusters

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U2 - 10.1016/j.physb.2011.09.066

DO - 10.1016/j.physb.2011.09.066

M3 - Article

SN - 0921-4526

VL - 407

SP - 1481

EP - 1484

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 10

ER -

Ion implantation induced defects in ZnO

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