Ion-implanted anti-resonant Fabry Perot saturable absorber for passive mode-locking of solid state lasers

Max Lederer; Barry Luther-Davies; Hoe Tan; Chennupat Jagadish

doi:10.1109/SIM.1998.785086

Ion-implanted anti-resonant Fabry Perot saturable absorber for passive mode-locking of solid state lasers

Max Lederer^*, Barry Luther-Davies, Hoe Tan, Chennupat Jagadish

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

We have fabricated GaAs based anti-resonant Fabry-Perot Saturable Absorbers (A-FPSAs) for passively mode-locking near infrared solid state lasers, using Metal Organic Vapour Phase Epitaxy (MOVPE) growth followed by ion-implantation and optional thermal annealing. We present differential reflectivity measurements showing the effect of ion implantation and annealing. The devices were characterised for their large signal response including saturation fluence, modulation depth and non-bleachable losses - important parameters for passive mode-locking. Finally we demonstrate mode-locking using our samples within a Ti:Sapphire laser observing stable and reliable self-starting, pulses in the 100fs range, and 50 nm tunability. Results of computer simulations are in good agreement with the experiments.

Original language	English
Pages	105-108
Number of pages	4
DOIs	https://doi.org/10.1109/SIM.1998.785086
Publication status	Published - 1999
Event	Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) - Berkeley, CA, USA Duration: 1 Jun 1998 → 5 Jun 1998

Conference

Conference	Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X)
City	Berkeley, CA, USA
Period	1/06/98 → 5/06/98

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10.1109/SIM.1998.785086

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title = "Ion-implanted anti-resonant Fabry Perot saturable absorber for passive mode-locking of solid state lasers",

abstract = "We have fabricated GaAs based anti-resonant Fabry-Perot Saturable Absorbers (A-FPSAs) for passively mode-locking near infrared solid state lasers, using Metal Organic Vapour Phase Epitaxy (MOVPE) growth followed by ion-implantation and optional thermal annealing. We present differential reflectivity measurements showing the effect of ion implantation and annealing. The devices were characterised for their large signal response including saturation fluence, modulation depth and non-bleachable losses - important parameters for passive mode-locking. Finally we demonstrate mode-locking using our samples within a Ti:Sapphire laser observing stable and reliable self-starting, pulses in the 100fs range, and 50 nm tunability. Results of computer simulations are in good agreement with the experiments.",

author = "Max Lederer and Barry Luther-Davies and Hoe Tan and Chennupat Jagadish",

year = "1999",

doi = "10.1109/SIM.1998.785086",

language = "English",

pages = "105--108",

note = "Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) ; Conference date: 01-06-1998 Through 05-06-1998",

}

Ion-implanted anti-resonant Fabry Perot saturable absorber for passive mode-locking of solid state lasers. / Lederer, Max; Luther-Davies, Barry; Tan, Hoe et al.
1999. 105-108 Paper presented at Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X), Berkeley, CA, USA.

Research output: Contribution to conference › Paper › peer-review

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T1 - Ion-implanted anti-resonant Fabry Perot saturable absorber for passive mode-locking of solid state lasers

AU - Lederer, Max

AU - Luther-Davies, Barry

AU - Tan, Hoe

AU - Jagadish, Chennupat

PY - 1999

Y1 - 1999

N2 - We have fabricated GaAs based anti-resonant Fabry-Perot Saturable Absorbers (A-FPSAs) for passively mode-locking near infrared solid state lasers, using Metal Organic Vapour Phase Epitaxy (MOVPE) growth followed by ion-implantation and optional thermal annealing. We present differential reflectivity measurements showing the effect of ion implantation and annealing. The devices were characterised for their large signal response including saturation fluence, modulation depth and non-bleachable losses - important parameters for passive mode-locking. Finally we demonstrate mode-locking using our samples within a Ti:Sapphire laser observing stable and reliable self-starting, pulses in the 100fs range, and 50 nm tunability. Results of computer simulations are in good agreement with the experiments.

AB - We have fabricated GaAs based anti-resonant Fabry-Perot Saturable Absorbers (A-FPSAs) for passively mode-locking near infrared solid state lasers, using Metal Organic Vapour Phase Epitaxy (MOVPE) growth followed by ion-implantation and optional thermal annealing. We present differential reflectivity measurements showing the effect of ion implantation and annealing. The devices were characterised for their large signal response including saturation fluence, modulation depth and non-bleachable losses - important parameters for passive mode-locking. Finally we demonstrate mode-locking using our samples within a Ti:Sapphire laser observing stable and reliable self-starting, pulses in the 100fs range, and 50 nm tunability. Results of computer simulations are in good agreement with the experiments.

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DO - 10.1109/SIM.1998.785086

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T2 - Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X)

Y2 - 1 June 1998 through 5 June 1998

ER -

Ion-implanted anti-resonant Fabry Perot saturable absorber for passive mode-locking of solid state lasers

Abstract

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