Ion implanted dielectric films for an improved optical and electronic silicon photovoltaic response

Over the past few years, ion implanters specifically developed for the high throughput required by the silicon photovoltaic industry, have become commercially available. Recent research and development has focused on the formation of doped surface regions, particularly the formation of selective emitters. In this study we explore two effects of ion implantation into a thermal silicon dioxide passivating/antireflection dielectric. We show evidence that the electronic and optical performance of the layer can be improved via the incorporation of charges created within the dielectric film and the creation of a graded refractive index, minimizing the surface recombination and reflection losses respectively.