Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications

C. Carmody*, H. H. Tan, C. Jagadish, A. Gaarder, S. Marcinkevičius

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    60 Citations (Scopus)

    Abstract

    Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications was studied. The shortest carrier lifetimes in InGaAs were achieved at annealing temperatures much lower than those that were associated with Fe activation. A jump in sheet resistance occurred for samples implanted at room temperature to a dose of 1×1015 cm-2 when annealed at 500°C.

    Original languageEnglish
    Pages (from-to)3913-3915
    Number of pages3
    JournalApplied Physics Letters
    Volume82
    Issue number22
    DOIs
    Publication statusPublished - 2 Jun 2003

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