Abstract
Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications was studied. The shortest carrier lifetimes in InGaAs were achieved at annealing temperatures much lower than those that were associated with Fe activation. A jump in sheet resistance occurred for samples implanted at room temperature to a dose of 1×1015 cm-2 when annealed at 500°C.
Original language | English |
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Pages (from-to) | 3913-3915 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 82 |
Issue number | 22 |
DOIs | |
Publication status | Published - 2 Jun 2003 |