Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications

C. Carmody; H. H. Tan; C. Jagadish; A. Gaarder; S. Marcinkevičius

doi:10.1063/1.1579565

Ion-implanted In_0.53Ga_0.47As for ultrafast optoelectronic applications

C. Carmody^*, H. H. Tan, C. Jagadish, A. Gaarder, S. Marcinkevičius

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

62 Citations (Scopus)

Abstract

Ion-implanted In_0.53Ga_0.47As for ultrafast optoelectronic applications was studied. The shortest carrier lifetimes in InGaAs were achieved at annealing temperatures much lower than those that were associated with Fe activation. A jump in sheet resistance occurred for samples implanted at room temperature to a dose of 1×10¹⁵ cm^-2 when annealed at 500°C.

Original language	English
Pages (from-to)	3913-3915
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	22
DOIs	https://doi.org/10.1063/1.1579565
Publication status	Published - 2 Jun 2003

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title = "Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications",

abstract = "Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications was studied. The shortest carrier lifetimes in InGaAs were achieved at annealing temperatures much lower than those that were associated with Fe activation. A jump in sheet resistance occurred for samples implanted at room temperature to a dose of 1×1015 cm-2 when annealed at 500°C.",

author = "C. Carmody and Tan, \{H. H.\} and C. Jagadish and A. Gaarder and S. Marcinkevi{\v c}ius",

year = "2003",

month = jun,

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doi = "10.1063/1.1579565",

language = "English",

volume = "82",

pages = "3913--3915",

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T1 - Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications

AU - Carmody, C.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Gaarder, A.

AU - Marcinkevičius, S.

PY - 2003/6/2

Y1 - 2003/6/2

N2 - Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications was studied. The shortest carrier lifetimes in InGaAs were achieved at annealing temperatures much lower than those that were associated with Fe activation. A jump in sheet resistance occurred for samples implanted at room temperature to a dose of 1×1015 cm-2 when annealed at 500°C.

AB - Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications was studied. The shortest carrier lifetimes in InGaAs were achieved at annealing temperatures much lower than those that were associated with Fe activation. A jump in sheet resistance occurred for samples implanted at room temperature to a dose of 1×1015 cm-2 when annealed at 500°C.

UR - https://www.scopus.com/pages/publications/0037631798

U2 - 10.1063/1.1579565

DO - 10.1063/1.1579565

M3 - Article

SN - 0003-6951

VL - 82

SP - 3913

EP - 3915

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Ion-implanted In_0.53Ga_0.47As for ultrafast optoelectronic applications

Abstract

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