Ion-irradiation-induced porosity in GaSb

S. M. Kluth; J. D. Fitz Gerald; M. C. Ridgway

doi:10.1063/1.1896428

Ion-irradiation-induced porosity in GaSb

S. M. Kluth^*, J. D. Fitz Gerald, M. C. Ridgway

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

57 Citations (Scopus)

Abstract

Porosity in GaSb induced by Ga69 ion irradiation has been investigated as a function of implant dose and temperature. Initially pores form in the implanted material which become elongated as they increase in size. With increasing implant dose, the structure continues to evolve into plates and finally a network of nanoscale rods. Swelling to 25 times the original implanted layer thickness has been observed. The temperature dependence of the minimum feature size has been established. The crystalline-to-amorphous and continuous-to-porous transformations proceed simultaneously. We suggest the latter results from the precipitation of interstitials at extended crystalline defects in preference to Frenkel pair recombination as potentially related to anomalous diffusion in GaSb.

Original language	English
Article number	131920
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	13
DOIs	https://doi.org/10.1063/1.1896428
Publication status	Published - 28 Mar 2005

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abstract = "Porosity in GaSb induced by Ga69 ion irradiation has been investigated as a function of implant dose and temperature. Initially pores form in the implanted material which become elongated as they increase in size. With increasing implant dose, the structure continues to evolve into plates and finally a network of nanoscale rods. Swelling to 25 times the original implanted layer thickness has been observed. The temperature dependence of the minimum feature size has been established. The crystalline-to-amorphous and continuous-to-porous transformations proceed simultaneously. We suggest the latter results from the precipitation of interstitials at extended crystalline defects in preference to Frenkel pair recombination as potentially related to anomalous diffusion in GaSb.",

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AU - Kluth, S. M.

AU - Fitz Gerald, J. D.

AU - Ridgway, M. C.

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N2 - Porosity in GaSb induced by Ga69 ion irradiation has been investigated as a function of implant dose and temperature. Initially pores form in the implanted material which become elongated as they increase in size. With increasing implant dose, the structure continues to evolve into plates and finally a network of nanoscale rods. Swelling to 25 times the original implanted layer thickness has been observed. The temperature dependence of the minimum feature size has been established. The crystalline-to-amorphous and continuous-to-porous transformations proceed simultaneously. We suggest the latter results from the precipitation of interstitials at extended crystalline defects in preference to Frenkel pair recombination as potentially related to anomalous diffusion in GaSb.

AB - Porosity in GaSb induced by Ga69 ion irradiation has been investigated as a function of implant dose and temperature. Initially pores form in the implanted material which become elongated as they increase in size. With increasing implant dose, the structure continues to evolve into plates and finally a network of nanoscale rods. Swelling to 25 times the original implanted layer thickness has been observed. The temperature dependence of the minimum feature size has been established. The crystalline-to-amorphous and continuous-to-porous transformations proceed simultaneously. We suggest the latter results from the precipitation of interstitials at extended crystalline defects in preference to Frenkel pair recombination as potentially related to anomalous diffusion in GaSb.

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Ion-irradiation-induced porosity in GaSb

Abstract

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