Ion irradiation of GeSi/Si strained-layer heterostructures

J. M. Glasko; R. G. Elliman; J. Zou; D. J.H. Cockayne; J. D. Fitz Gerald

Ion irradiation of GeSi/Si strained-layer heterostructures

J. M. Glasko^*, R. G. Elliman, J. Zou, D. J.H. Cockayne, J. D. Fitz Gerald

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

The strain in GeSi/Si strained layer heterostructures is studied as a function of ion-irradiation and thermal annealing conditions and correlated with the defect microstructure in the GeSi alloy layer. For room temperature irradiation, compressive strain within the alloy layer increases with increasing ion fluence for both low (projected range of ions within the alloy layer) and high energy (projected range of the ions greater than alloy thickness) irradiation. In contrast, elevated temperature irradiation results in an increase in strain for low-energy irradiation, but a decrease for high-energy irradiation. For example, strain relaxation is observed in layers irradiated with 1 MeV ²⁸Si⁺ at 253°C. During subsequent annealing to 750°C, the strain is partially recovered but relaxes again at temperatures >750°C. This behavior is shown to be consistent with the evolution of intrinsic (vacancy-type) defects within the alloy layer.

Original language	English
Pages (from-to)	55-65
Number of pages	11
Journal	Materials Research Society Symposium - Proceedings
Volume	540
Publication status	Published - 1999
Event	Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA Duration: 30 Nov 1998 → 3 Dec 1998

Cite this

@article{54d8ffaf36314be787f2aa7eb69125c9,

title = "Ion irradiation of GeSi/Si strained-layer heterostructures",

abstract = "The strain in GeSi/Si strained layer heterostructures is studied as a function of ion-irradiation and thermal annealing conditions and correlated with the defect microstructure in the GeSi alloy layer. For room temperature irradiation, compressive strain within the alloy layer increases with increasing ion fluence for both low (projected range of ions within the alloy layer) and high energy (projected range of the ions greater than alloy thickness) irradiation. In contrast, elevated temperature irradiation results in an increase in strain for low-energy irradiation, but a decrease for high-energy irradiation. For example, strain relaxation is observed in layers irradiated with 1 MeV 28Si+ at 253°C. During subsequent annealing to 750°C, the strain is partially recovered but relaxes again at temperatures >750°C. This behavior is shown to be consistent with the evolution of intrinsic (vacancy-type) defects within the alloy layer.",

author = "Glasko, {J. M.} and Elliman, {R. G.} and J. Zou and Cockayne, {D. J.H.} and {Fitz Gerald}, {J. D.}",

year = "1999",

language = "English",

volume = "540",

pages = "55--65",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' ; Conference date: 30-11-1998 Through 03-12-1998",

}

TY - JOUR

T1 - Ion irradiation of GeSi/Si strained-layer heterostructures

AU - Glasko, J. M.

AU - Elliman, R. G.

AU - Zou, J.

AU - Cockayne, D. J.H.

AU - Fitz Gerald, J. D.

PY - 1999

Y1 - 1999

N2 - The strain in GeSi/Si strained layer heterostructures is studied as a function of ion-irradiation and thermal annealing conditions and correlated with the defect microstructure in the GeSi alloy layer. For room temperature irradiation, compressive strain within the alloy layer increases with increasing ion fluence for both low (projected range of ions within the alloy layer) and high energy (projected range of the ions greater than alloy thickness) irradiation. In contrast, elevated temperature irradiation results in an increase in strain for low-energy irradiation, but a decrease for high-energy irradiation. For example, strain relaxation is observed in layers irradiated with 1 MeV 28Si+ at 253°C. During subsequent annealing to 750°C, the strain is partially recovered but relaxes again at temperatures >750°C. This behavior is shown to be consistent with the evolution of intrinsic (vacancy-type) defects within the alloy layer.

AB - The strain in GeSi/Si strained layer heterostructures is studied as a function of ion-irradiation and thermal annealing conditions and correlated with the defect microstructure in the GeSi alloy layer. For room temperature irradiation, compressive strain within the alloy layer increases with increasing ion fluence for both low (projected range of ions within the alloy layer) and high energy (projected range of the ions greater than alloy thickness) irradiation. In contrast, elevated temperature irradiation results in an increase in strain for low-energy irradiation, but a decrease for high-energy irradiation. For example, strain relaxation is observed in layers irradiated with 1 MeV 28Si+ at 253°C. During subsequent annealing to 750°C, the strain is partially recovered but relaxes again at temperatures >750°C. This behavior is shown to be consistent with the evolution of intrinsic (vacancy-type) defects within the alloy layer.

UR - http://www.scopus.com/inward/record.url?scp=0032592227&partnerID=8YFLogxK

M3 - Conference article

SN - 0272-9172

VL - 540

SP - 55

EP - 65

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998'

Y2 - 30 November 1998 through 3 December 1998

ER -

Ion irradiation of GeSi/Si strained-layer heterostructures

Abstract

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