Ion mass effect on vacancy-related deep levels in Si induced by ion implantation

E. V. Monakhov; J. Wong-Leung; A. Yu Kuznetsov; A. Yu Kuznetsov; C. Jagadish; B. G. Svensson; B. G. Svensson

doi:10.1103/PhysRevB.65.245201

Ion mass effect on vacancy-related deep levels in Si induced by ion implantation

E. V. Monakhov, J. Wong-Leung, A. Yu Kuznetsov, A. Yu Kuznetsov, C. Jagadish, B. G. Svensson, B. G. Svensson

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44 Citations (Scopus)

Abstract

The ion mass effect on the dominating vacancy related deep levels in Cz-Si implanted with 4-MeV C ions and 6-MeV Si ions has been investigated by deep level transient spectroscopy (DLTS). It is found that the intensity of the DLTS signal for the doubly negative charge state of the divacancy [V₂(=/-)] deviates from a one-to-one correlation with that of the singly negative charge state of the divacancy [V₂(-/0)] and decreases, compared to V₂(-/0), with increasing ion mass. Capture kinetics studies reveal that the electron-capture rate for V₂(=/-) decreases with increasing ion mass, while that for V₂(-/0) has a weaker dependence on ion mass. In this work, we suggest a model to explain most of the known experimental observations of the ion mass effect for V₂(=/-). The model assumes a local compensation of the carrier concentration in highly disordered regions located within the collision cascades. In addition, it has been observed that the DLTS signal of the vacancy-oxygen pair exhibits a trend similar to that for V₂(=/-) regarding the ion mass effect.

Original language	English
Article number	245201
Pages (from-to)	2452011-2452019
Number of pages	9
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	65
Issue number	24
DOIs	https://doi.org/10.1103/PhysRevB.65.245201
Publication status	Published - 15 Jun 2002

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@article{948397ccb8e1481db4b14c346252f0d0,

title = "Ion mass effect on vacancy-related deep levels in Si induced by ion implantation",

abstract = "The ion mass effect on the dominating vacancy related deep levels in Cz-Si implanted with 4-MeV C ions and 6-MeV Si ions has been investigated by deep level transient spectroscopy (DLTS). It is found that the intensity of the DLTS signal for the doubly negative charge state of the divacancy [V2(=/-)] deviates from a one-to-one correlation with that of the singly negative charge state of the divacancy [V2(-/0)] and decreases, compared to V2(-/0), with increasing ion mass. Capture kinetics studies reveal that the electron-capture rate for V2(=/-) decreases with increasing ion mass, while that for V2(-/0) has a weaker dependence on ion mass. In this work, we suggest a model to explain most of the known experimental observations of the ion mass effect for V2(=/-). The model assumes a local compensation of the carrier concentration in highly disordered regions located within the collision cascades. In addition, it has been observed that the DLTS signal of the vacancy-oxygen pair exhibits a trend similar to that for V2(=/-) regarding the ion mass effect.",

author = "Monakhov, {E. V.} and J. Wong-Leung and Kuznetsov, {A. Yu} and Kuznetsov, {A. Yu} and C. Jagadish and Svensson, {B. G.} and Svensson, {B. G.}",

year = "2002",

month = jun,

day = "15",

doi = "10.1103/PhysRevB.65.245201",

language = "English",

volume = "65",

pages = "2452011--2452019",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "0163-1829",

publisher = "American Physical Society",

number = "24",

}

TY - JOUR

T1 - Ion mass effect on vacancy-related deep levels in Si induced by ion implantation

AU - Monakhov, E. V.

AU - Wong-Leung, J.

AU - Kuznetsov, A. Yu

AU - Jagadish, C.

AU - Svensson, B. G.

PY - 2002/6/15

Y1 - 2002/6/15

N2 - The ion mass effect on the dominating vacancy related deep levels in Cz-Si implanted with 4-MeV C ions and 6-MeV Si ions has been investigated by deep level transient spectroscopy (DLTS). It is found that the intensity of the DLTS signal for the doubly negative charge state of the divacancy [V2(=/-)] deviates from a one-to-one correlation with that of the singly negative charge state of the divacancy [V2(-/0)] and decreases, compared to V2(-/0), with increasing ion mass. Capture kinetics studies reveal that the electron-capture rate for V2(=/-) decreases with increasing ion mass, while that for V2(-/0) has a weaker dependence on ion mass. In this work, we suggest a model to explain most of the known experimental observations of the ion mass effect for V2(=/-). The model assumes a local compensation of the carrier concentration in highly disordered regions located within the collision cascades. In addition, it has been observed that the DLTS signal of the vacancy-oxygen pair exhibits a trend similar to that for V2(=/-) regarding the ion mass effect.

AB - The ion mass effect on the dominating vacancy related deep levels in Cz-Si implanted with 4-MeV C ions and 6-MeV Si ions has been investigated by deep level transient spectroscopy (DLTS). It is found that the intensity of the DLTS signal for the doubly negative charge state of the divacancy [V2(=/-)] deviates from a one-to-one correlation with that of the singly negative charge state of the divacancy [V2(-/0)] and decreases, compared to V2(-/0), with increasing ion mass. Capture kinetics studies reveal that the electron-capture rate for V2(=/-) decreases with increasing ion mass, while that for V2(-/0) has a weaker dependence on ion mass. In this work, we suggest a model to explain most of the known experimental observations of the ion mass effect for V2(=/-). The model assumes a local compensation of the carrier concentration in highly disordered regions located within the collision cascades. In addition, it has been observed that the DLTS signal of the vacancy-oxygen pair exhibits a trend similar to that for V2(=/-) regarding the ion mass effect.

UR - http://www.scopus.com/inward/record.url?scp=0005789938&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.65.245201

DO - 10.1103/PhysRevB.65.245201

M3 - Article

SN - 0163-1829

VL - 65

SP - 2452011

EP - 2452019

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 24

M1 - 245201

ER -

Ion mass effect on vacancy-related deep levels in Si induced by ion implantation

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