Ion-solid interactions at the extremes of electronic energy loss: Examples for amorphous semiconductors and embedded nanostructures

M. C. Ridgway*, F. Djurabekova, K. Nordlund

*Corresponding author for this work

    Research output: Contribution to journalReview articlepeer-review

    23 Citations (Scopus)

    Abstract

    A selection of ion-solid interactions in the swift heavy-ion irradiation regime is reviewed. We consider the effects of electronic energy loss at tens of keV/nm on both bulk material and nanostructures embedded in a matrix. Specific examples include ion track formation at low ion fluences in bulk Si and Ge and porous layer formation at high ion fluences in bulk Ge. In addition, the intriguing shape and phase transformations observable at high ion fluences in Ge and metallic nanoparticles embedded in bulk SiO2 are examined and compared. Experiment, modelling and simulation are combined synergistically as we seek fundamental atomistic insight into these unique yet poorly understood processes operative only at the extremes of electronic energy loss.

    Original languageEnglish
    Pages (from-to)29-38
    Number of pages10
    JournalCurrent Opinion in Solid State and Materials Science
    Volume19
    Issue number1
    DOIs
    Publication statusPublished - 1 Feb 2015

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