Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping

D. H. Macdonald; L. J. Geerligs; A. Azzizi

doi:10.1063/1.1637136

Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping

D. H. Macdonald^*, L. J. Geerligs, A. Azzizi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

236 Citations (Scopus)

Abstract

Existing procedures for measuring Fe concentrations using low-injection SPV diffusion length measurements on 5-15 Ωcm Si were extended to include arbitrary doping, as well as mid- and high-injection lifetime measurements. This allows the use of fast, contactless lifetime techniques for very sensitive measurement of Fe concentrations on any crystalline silicon material. Thus, the extended technique was slightly more complex than the SPV approach, since the prefactor for determining [Fe]_total changes with the injection level.

Original language	English
Pages (from-to)	1021-1028
Number of pages	8
Journal	Journal of Applied Physics
Volume	95
Issue number	3
DOIs	https://doi.org/10.1063/1.1637136
Publication status	Published - 1 Feb 2004
Externally published	Yes

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@article{7fc2dd0958fb469b917e82163e12072e,

title = "Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping",

abstract = "Existing procedures for measuring Fe concentrations using low-injection SPV diffusion length measurements on 5-15 Ωcm Si were extended to include arbitrary doping, as well as mid- and high-injection lifetime measurements. This allows the use of fast, contactless lifetime techniques for very sensitive measurement of Fe concentrations on any crystalline silicon material. Thus, the extended technique was slightly more complex than the SPV approach, since the prefactor for determining [Fe]total changes with the injection level.",

author = "Macdonald, {D. H.} and Geerligs, {L. J.} and A. Azzizi",

year = "2004",

month = feb,

day = "1",

doi = "10.1063/1.1637136",

language = "English",

volume = "95",

pages = "1021--1028",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping

AU - Macdonald, D. H.

AU - Geerligs, L. J.

AU - Azzizi, A.

PY - 2004/2/1

Y1 - 2004/2/1

N2 - Existing procedures for measuring Fe concentrations using low-injection SPV diffusion length measurements on 5-15 Ωcm Si were extended to include arbitrary doping, as well as mid- and high-injection lifetime measurements. This allows the use of fast, contactless lifetime techniques for very sensitive measurement of Fe concentrations on any crystalline silicon material. Thus, the extended technique was slightly more complex than the SPV approach, since the prefactor for determining [Fe]total changes with the injection level.

AB - Existing procedures for measuring Fe concentrations using low-injection SPV diffusion length measurements on 5-15 Ωcm Si were extended to include arbitrary doping, as well as mid- and high-injection lifetime measurements. This allows the use of fast, contactless lifetime techniques for very sensitive measurement of Fe concentrations on any crystalline silicon material. Thus, the extended technique was slightly more complex than the SPV approach, since the prefactor for determining [Fe]total changes with the injection level.

UR - http://www.scopus.com/inward/record.url?scp=1142304524&partnerID=8YFLogxK

U2 - 10.1063/1.1637136

DO - 10.1063/1.1637136

M3 - Article

SN - 0021-8979

VL - 95

SP - 1021

EP - 1028

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -

Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping

Abstract

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