TY - GEN
T1 - Iron imaging in multicrystalline silicon wafers via photoluminescence
AU - Fan, Yang Chieh
AU - Tan, Jason
AU - Phang, Sieu Pheng
AU - Macdonald, Daniel
PY - 2010
Y1 - 2010
N2 - We have extended the development of a recent interstitial iron imaging technique based on photoluminescence (PL) imaging and iron-boron pair dissociation. The method is best applied below the lifetime crossover point, in order to avoid FeB pair breaking during the PL measurements. We have applied this high resolution iron imaging technique to a range of multicrystalline silicon wafers from different parts of an ingot, both before and after phosphorus gettering. The high spatial resolution mega-pixel images of the dissolved iron concentration generated in this way help to better understand the behavior of iron in this material, and it's response to cell processing steps.
AB - We have extended the development of a recent interstitial iron imaging technique based on photoluminescence (PL) imaging and iron-boron pair dissociation. The method is best applied below the lifetime crossover point, in order to avoid FeB pair breaking during the PL measurements. We have applied this high resolution iron imaging technique to a range of multicrystalline silicon wafers from different parts of an ingot, both before and after phosphorus gettering. The high spatial resolution mega-pixel images of the dissolved iron concentration generated in this way help to better understand the behavior of iron in this material, and it's response to cell processing steps.
UR - http://www.scopus.com/inward/record.url?scp=78650168107&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2010.5616749
DO - 10.1109/PVSC.2010.5616749
M3 - Conference contribution
SN - 9781424458912
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 439
EP - 442
BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
T2 - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Y2 - 20 June 2010 through 25 June 2010
ER -