Iron imaging in multicrystalline silicon wafers via photoluminescence

Yang Chieh Fan*, Jason Tan, Sieu Pheng Phang, Daniel Macdonald

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    4 Citations (Scopus)

    Abstract

    We have extended the development of a recent interstitial iron imaging technique based on photoluminescence (PL) imaging and iron-boron pair dissociation. The method is best applied below the lifetime crossover point, in order to avoid FeB pair breaking during the PL measurements. We have applied this high resolution iron imaging technique to a range of multicrystalline silicon wafers from different parts of an ingot, both before and after phosphorus gettering. The high spatial resolution mega-pixel images of the dissolved iron concentration generated in this way help to better understand the behavior of iron in this material, and it's response to cell processing steps.

    Original languageEnglish
    Title of host publicationProgram - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
    Pages439-442
    Number of pages4
    DOIs
    Publication statusPublished - 2010
    Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
    Duration: 20 Jun 201025 Jun 2010

    Publication series

    NameConference Record of the IEEE Photovoltaic Specialists Conference
    ISSN (Print)0160-8371

    Conference

    Conference35th IEEE Photovoltaic Specialists Conference, PVSC 2010
    Country/TerritoryUnited States
    CityHonolulu, HI
    Period20/06/1025/06/10

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