Iron imaging in multicrystalline silicon wafers via photoluminescence

Yang Chieh Fan; Jason Tan; Sieu Pheng Phang; Daniel Macdonald

doi:10.1109/PVSC.2010.5616749

Iron imaging in multicrystalline silicon wafers via photoluminescence

Yang Chieh Fan^*
, Jason Tan
, Sieu Pheng Phang
, Daniel Macdonald

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

4 Citations (Scopus)

Abstract

We have extended the development of a recent interstitial iron imaging technique based on photoluminescence (PL) imaging and iron-boron pair dissociation. The method is best applied below the lifetime crossover point, in order to avoid FeB pair breaking during the PL measurements. We have applied this high resolution iron imaging technique to a range of multicrystalline silicon wafers from different parts of an ingot, both before and after phosphorus gettering. The high spatial resolution mega-pixel images of the dissolved iron concentration generated in this way help to better understand the behavior of iron in this material, and it's response to cell processing steps.

Original language	English
Title of host publication	Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages	439-442
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2010.5616749
Publication status	Published - 2010
Event	35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: 20 Jun 2010 → 25 Jun 2010

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/Territory	United States
City	Honolulu, HI
Period	20/06/10 → 25/06/10

Access to Document

10.1109/PVSC.2010.5616749

Cite this

@inproceedings{9b56f670b3e8411c89160c2870c4f992,

title = "Iron imaging in multicrystalline silicon wafers via photoluminescence",

abstract = "We have extended the development of a recent interstitial iron imaging technique based on photoluminescence (PL) imaging and iron-boron pair dissociation. The method is best applied below the lifetime crossover point, in order to avoid FeB pair breaking during the PL measurements. We have applied this high resolution iron imaging technique to a range of multicrystalline silicon wafers from different parts of an ingot, both before and after phosphorus gettering. The high spatial resolution mega-pixel images of the dissolved iron concentration generated in this way help to better understand the behavior of iron in this material, and it's response to cell processing steps.",

author = "Fan, \{Yang Chieh\} and Jason Tan and Phang, \{Sieu Pheng\} and Daniel Macdonald",

year = "2010",

doi = "10.1109/PVSC.2010.5616749",

language = "English",

isbn = "9781424458912",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "439--442",

booktitle = "Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010",

note = "35th IEEE Photovoltaic Specialists Conference, PVSC 2010 ; Conference date: 20-06-2010 Through 25-06-2010",

}

Fan, YC, Tan, J, Phang, SP & Macdonald, D 2010, Iron imaging in multicrystalline silicon wafers via photoluminescence. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5616749, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 439-442, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 20/06/10. https://doi.org/10.1109/PVSC.2010.5616749

Iron imaging in multicrystalline silicon wafers via photoluminescence. / Fan, Yang Chieh; Tan, Jason; Phang, Sieu Pheng et al.
Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 439-442 5616749 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

TY - GEN

T1 - Iron imaging in multicrystalline silicon wafers via photoluminescence

AU - Fan, Yang Chieh

AU - Tan, Jason

AU - Phang, Sieu Pheng

AU - Macdonald, Daniel

PY - 2010

Y1 - 2010

N2 - We have extended the development of a recent interstitial iron imaging technique based on photoluminescence (PL) imaging and iron-boron pair dissociation. The method is best applied below the lifetime crossover point, in order to avoid FeB pair breaking during the PL measurements. We have applied this high resolution iron imaging technique to a range of multicrystalline silicon wafers from different parts of an ingot, both before and after phosphorus gettering. The high spatial resolution mega-pixel images of the dissolved iron concentration generated in this way help to better understand the behavior of iron in this material, and it's response to cell processing steps.

AB - We have extended the development of a recent interstitial iron imaging technique based on photoluminescence (PL) imaging and iron-boron pair dissociation. The method is best applied below the lifetime crossover point, in order to avoid FeB pair breaking during the PL measurements. We have applied this high resolution iron imaging technique to a range of multicrystalline silicon wafers from different parts of an ingot, both before and after phosphorus gettering. The high spatial resolution mega-pixel images of the dissolved iron concentration generated in this way help to better understand the behavior of iron in this material, and it's response to cell processing steps.

UR - https://www.scopus.com/pages/publications/78650168107

U2 - 10.1109/PVSC.2010.5616749

DO - 10.1109/PVSC.2010.5616749

M3 - Conference Paper

SN - 9781424458912

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 439

EP - 442

BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010

T2 - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010

Y2 - 20 June 2010 through 25 June 2010

ER -

Iron imaging in multicrystalline silicon wafers via photoluminescence

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