Irradiation fluence dependent microstructural evolution of porous InSb

S. M. Kluth; David Llewellyn; M. C. Ridgway

doi:10.1016/j.nimb.2005.08.182

Irradiation fluence dependent microstructural evolution of porous InSb

S. M. Kluth^*, David Llewellyn, M. C. Ridgway

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

Ion irradiation of InSb yields not only amorphization but also causes the material to become porous. This irradiation-induced porosity in InSb has been investigated using implantation of 1 MeV ⁶⁹Ga⁺ ions. Initially, voids form which then develop into a sponge-like structure. Further irradiation generates a network of rods ∼20 nm in diameter. The precursors to porosity, i.e. small voids and dislocation loops, are apparent with transmission electron microscopy in the damaged region below the porous layer. Rutherford backscattering spectrometry and channeling indicates that damage to the crystalline lattice builds up more rapidly in implants performed at liquid nitrogen temperature than at room temperature.

Original language	English
Pages (from-to)	640-642
Number of pages	3
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	242
Issue number	1-2
DOIs	https://doi.org/10.1016/j.nimb.2005.08.182
Publication status	Published - Jan 2006

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10.1016/j.nimb.2005.08.182

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title = "Irradiation fluence dependent microstructural evolution of porous InSb",

abstract = "Ion irradiation of InSb yields not only amorphization but also causes the material to become porous. This irradiation-induced porosity in InSb has been investigated using implantation of 1 MeV 69Ga+ ions. Initially, voids form which then develop into a sponge-like structure. Further irradiation generates a network of rods ∼20 nm in diameter. The precursors to porosity, i.e. small voids and dislocation loops, are apparent with transmission electron microscopy in the damaged region below the porous layer. Rutherford backscattering spectrometry and channeling indicates that damage to the crystalline lattice builds up more rapidly in implants performed at liquid nitrogen temperature than at room temperature.",

keywords = "III-V semiconductors, InSb, Ion implantation, Porous semiconductors",

author = "Kluth, {S. M.} and David Llewellyn and Ridgway, {M. C.}",

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AU - Kluth, S. M.

AU - Llewellyn, David

AU - Ridgway, M. C.

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N2 - Ion irradiation of InSb yields not only amorphization but also causes the material to become porous. This irradiation-induced porosity in InSb has been investigated using implantation of 1 MeV 69Ga+ ions. Initially, voids form which then develop into a sponge-like structure. Further irradiation generates a network of rods ∼20 nm in diameter. The precursors to porosity, i.e. small voids and dislocation loops, are apparent with transmission electron microscopy in the damaged region below the porous layer. Rutherford backscattering spectrometry and channeling indicates that damage to the crystalline lattice builds up more rapidly in implants performed at liquid nitrogen temperature than at room temperature.

AB - Ion irradiation of InSb yields not only amorphization but also causes the material to become porous. This irradiation-induced porosity in InSb has been investigated using implantation of 1 MeV 69Ga+ ions. Initially, voids form which then develop into a sponge-like structure. Further irradiation generates a network of rods ∼20 nm in diameter. The precursors to porosity, i.e. small voids and dislocation loops, are apparent with transmission electron microscopy in the damaged region below the porous layer. Rutherford backscattering spectrometry and channeling indicates that damage to the crystalline lattice builds up more rapidly in implants performed at liquid nitrogen temperature than at room temperature.

KW - III-V semiconductors

KW - InSb

KW - Ion implantation

KW - Porous semiconductors

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

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ER -

Irradiation fluence dependent microstructural evolution of porous InSb

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