Irradiation-induced defect configurations in Ge substrates characterised with perturbed angular correlation

C. J. Glover, A. P. Byrne, M. C. Ridgway*

*Corresponding author for this work

    Research output: Contribution to journalConference articlepeer-review

    5 Citations (Scopus)

    Abstract

    Perturbed angular correlation (PAC) studies with radioactive 111 In probes in crystalline Ge substrates have previously established the presence of two distinct defective configurations following either electron or ion irradiation. Though such defects have been tentatively identified as In-vacancy (In-V) and In-interstitial (In-I) configurations, an unambiguous assignment is still lacking and conflicting interpretations are apparent. For the present report, a series of experiments have been performed as functions of ion dose, background dopant and dopant concentration to examine both the validity of previous suppositions and produce supplementary evidence to aid in determining the microscopic nature of the two defective configurations. The relative fractions of the defective configurations were generally insensitive to dopant concentration and thus did not exhibit a significant Fermi level dependence. The present results suggest that the formation of an In-V complex is not the result of elastic interaction between an In-acceptor and neutral vacancy. Alternative interpretations are discussed.

    Original languageEnglish
    Pages (from-to)51-55
    Number of pages5
    JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
    Volume175-177
    DOIs
    Publication statusPublished - Apr 2001
    Event12th International Conference on Ion Beam Modification of Materials - Rio Grande do Sul, Brazil
    Duration: 3 Sept 20008 Sept 2000

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