Kinetics and dynamics of the regeneration of boron-oxygen defects in compensated n-type silicon

Chang Sun; Daniel Chen; Fiacre Rougieux; Rabin Basnet; Brett Hallam; Daniel Macdonald

doi:10.1016/j.solmat.2019.03.016

Kinetics and dynamics of the regeneration of boron-oxygen defects in compensated n-type silicon

Chang Sun^*, Daniel Chen, Fiacre Rougieux, Rabin Basnet, Brett Hallam, Daniel Macdonald

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The effects of doping level, illumination intensity and temperature on the regeneration kinetics and dynamics of BO defects in compensated n-Si have been investigated. The regeneration rate, corrected with interstitial oxygen concentration and average injection level, is almost constant in n-type samples with different doping levels under the same regeneration condition. It is proportional to the average injection level during regeneration when the doping level and temperature are fixed. In comparison with previous studies using n-type silicon, the regeneration completeness is significantly improved, especially in samples with net doping levels higher than 1 × 10 ¹⁶ cm ⁻³ , due to the higher regeneration temperature and more stable surface passivation films. The remaining incompleteness is mostly dominated by the occupation of the annealed state (as opposed to the activated state). For rapid and complete regeneration, the optimal condition is applying high illumination intensities at around 200°C.

Original language	English
Pages (from-to)	174-181
Number of pages	8
Journal	Solar Energy Materials and Solar Cells
Volume	195
DOIs	https://doi.org/10.1016/j.solmat.2019.03.016
Publication status	Published - 15 Jun 2019

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@article{7b96435f64e1448b8214ad61756d65f2,

title = "Kinetics and dynamics of the regeneration of boron-oxygen defects in compensated n-type silicon",

abstract = " The effects of doping level, illumination intensity and temperature on the regeneration kinetics and dynamics of BO defects in compensated n-Si have been investigated. The regeneration rate, corrected with interstitial oxygen concentration and average injection level, is almost constant in n-type samples with different doping levels under the same regeneration condition. It is proportional to the average injection level during regeneration when the doping level and temperature are fixed. In comparison with previous studies using n-type silicon, the regeneration completeness is significantly improved, especially in samples with net doping levels higher than 1 × 10 16 cm −3 , due to the higher regeneration temperature and more stable surface passivation films. The remaining incompleteness is mostly dominated by the occupation of the annealed state (as opposed to the activated state). For rapid and complete regeneration, the optimal condition is applying high illumination intensities at around 200°C.",

keywords = "Boron, Compensated, Light-induced degradation, Oxygen, Regeneration, n-type silicon",

author = "Chang Sun and Daniel Chen and Fiacre Rougieux and Rabin Basnet and Brett Hallam and Daniel Macdonald",

note = "Publisher Copyright: {\textcopyright} 2019 The Authors",

year = "2019",

month = jun,

day = "15",

doi = "10.1016/j.solmat.2019.03.016",

language = "English",

volume = "195",

pages = "174--181",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Kinetics and dynamics of the regeneration of boron-oxygen defects in compensated n-type silicon

AU - Sun, Chang

AU - Chen, Daniel

AU - Rougieux, Fiacre

AU - Basnet, Rabin

AU - Hallam, Brett

AU - Macdonald, Daniel

PY - 2019/6/15

Y1 - 2019/6/15

N2 - The effects of doping level, illumination intensity and temperature on the regeneration kinetics and dynamics of BO defects in compensated n-Si have been investigated. The regeneration rate, corrected with interstitial oxygen concentration and average injection level, is almost constant in n-type samples with different doping levels under the same regeneration condition. It is proportional to the average injection level during regeneration when the doping level and temperature are fixed. In comparison with previous studies using n-type silicon, the regeneration completeness is significantly improved, especially in samples with net doping levels higher than 1 × 10 16 cm −3 , due to the higher regeneration temperature and more stable surface passivation films. The remaining incompleteness is mostly dominated by the occupation of the annealed state (as opposed to the activated state). For rapid and complete regeneration, the optimal condition is applying high illumination intensities at around 200°C.

AB - The effects of doping level, illumination intensity and temperature on the regeneration kinetics and dynamics of BO defects in compensated n-Si have been investigated. The regeneration rate, corrected with interstitial oxygen concentration and average injection level, is almost constant in n-type samples with different doping levels under the same regeneration condition. It is proportional to the average injection level during regeneration when the doping level and temperature are fixed. In comparison with previous studies using n-type silicon, the regeneration completeness is significantly improved, especially in samples with net doping levels higher than 1 × 10 16 cm −3 , due to the higher regeneration temperature and more stable surface passivation films. The remaining incompleteness is mostly dominated by the occupation of the annealed state (as opposed to the activated state). For rapid and complete regeneration, the optimal condition is applying high illumination intensities at around 200°C.

KW - Boron

KW - Compensated

KW - Light-induced degradation

KW - Oxygen

KW - Regeneration

KW - n-type silicon

UR - http://www.scopus.com/inward/record.url?scp=85062857299&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2019.03.016

DO - 10.1016/j.solmat.2019.03.016

M3 - Article

SN - 0927-0248

VL - 195

SP - 174

EP - 181

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -

Kinetics and dynamics of the regeneration of boron-oxygen defects in compensated n-type silicon

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