Kondo-like behavior in ThAsSe and UAsSe

J. Schoenes*, R. L. Withers, F. Hulliger

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)


    Diamagnetic ThAsSe and ferromagnetic UAsSe display negative temperature coefficients of the electrical resistivity over extended temperature ranges. Electron-diffraction studies show that As-As dimerizations within the As layers cause this Kondo-like behavior in ThAsSe and do also contribute in UAsSe. We suggest that a coupling between neighboring As layers at the lowest temperatures may be at the origin of a second Kondo-like regime below ≈15 K.

    Original languageEnglish
    Pages (from-to)1778-1780
    Number of pages3
    JournalJournal of Magnetism and Magnetic Materials
    Issue number2 SUPPL. PART 2
    Publication statusPublished - Mar 2007


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