Abstract
Diamagnetic ThAsSe and ferromagnetic UAsSe display negative temperature coefficients of the electrical resistivity over extended temperature ranges. Electron-diffraction studies show that As-As dimerizations within the As layers cause this Kondo-like behavior in ThAsSe and do also contribute in UAsSe. We suggest that a coupling between neighboring As layers at the lowest temperatures may be at the origin of a second Kondo-like regime below ≈15 K.
| Original language | English |
|---|---|
| Pages (from-to) | 1778-1780 |
| Number of pages | 3 |
| Journal | Journal of Magnetism and Magnetic Materials |
| Volume | 310 |
| Issue number | 2 SUPPL. PART 2 |
| DOIs | |
| Publication status | Published - Mar 2007 |