Abstract
We present large area n-type solar cells (n-PERT) featuring a rear-boron-diffused emitter passivated with a stack of ALD Al2O3 and PECVD SiOx. We present the advantages of such a device structure and we show that efficiencies of 22% are within reach in the near future even without resorting to a back-contacted configuration and/or contact passivation. (PDF) LARGE AREA N-TYPE C-SI SOLAR CELLS FEATURING REAR EMITTER AND EFFICIENCY BEYOND 21%. Available from: https://www.researchgate.net/publication/271965089_LARGE_AREA_N-TYPE_C-SI_SOLAR_CELLS_FEATURING_REAR_EMITTER_AND_EFFICIENCY_BEYOND_21 [accessed Dec 14 2018].
| Original language | English |
|---|---|
| Title of host publication | The 6th World Conference on Photovoltaic Energy Conversion |
| Place of Publication | USA |
| Publisher | IEEE |
| Pages | 543-544pp |
| Edition | Peer Reviewed |
| Publication status | Published - 2014 |
| Event | The 6th World Conference on Photovoltaic Energy Conversion - Kyoto, Japan, Japan Duration: 1 Jan 2015 → … |
Conference
| Conference | The 6th World Conference on Photovoltaic Energy Conversion |
|---|---|
| Country/Territory | Japan |
| Period | 1/01/15 → … |
| Other | November 16-21 2014 |
Fingerprint
Dive into the research topics of 'Large area n-type c-Si solar cells featuring rear emitter and efficiency beyond 21%**'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver