Large-Area n-Type PERT Solar Cells Featuring Rear p+ Emitter Passivated by ALD Al2O3

Emanuele Cornagliotti; Angel Uruena; Monica Aleman; Aashish Sharma; Loic Tous; Richard Russell; Patrick Choulat; Jia Chen; Joachim John; Michael Haslinger; Filip Duerinckx; Bas Dielissen; Roger Gortzen; Lachlan Black; Jozef Szlufcik

doi:10.1109/JPHOTOV.2015.2458041

Large-Area n-Type PERT Solar Cells Featuring Rear p⁺ Emitter Passivated by ALD Al₂O₃

Emanuele Cornagliotti, Angel Uruena, Monica Aleman, Aashish Sharma, Loic Tous, Richard Russell, Patrick Choulat, Jia Chen, Joachim John, Michael Haslinger, Filip Duerinckx, Bas Dielissen, Roger Gortzen, Lachlan Black, Jozef Szlufcik

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16 Citations (Scopus)

Abstract

We present large-area n-type PERT solar cells featuring a rear boron emitter passivated by a stack of ALD Al₂O₃ and PECVD SiO_x. After illustrating the technological and fundamental advantages of such a device architecture, we show that the Al₂O₃/SiO_x stack employed to passivate the boron emitter is unaffected by the rear metallization processes and can suppress the Shockley-Read-Hall surface recombination current to values below 2 fA/cm², provided that the Al₂O₃ thickness is larger than 7 nm. Efficiencies of 21.5% on 156-mm commercial-grade Cz-Si substrates are demonstrated in this study, when the rear Al₂O₃/SiO_x passivation is applied in combination with a homogeneous front-surface field (FSF). The passivation stack developed herein can sustain cell efficiencies in excess of 22% and V_oc above 685 mV when a selective FSF is implemented, despite the absence of passivated contacts. Finally, we demonstrate that such cells do not suffer from light-induced degradation.

Original language	English
Article number	7174943
Pages (from-to)	1366-1372
Number of pages	7
Journal	IEEE Journal of Photovoltaics
Volume	5
Issue number	5
DOIs	https://doi.org/10.1109/JPHOTOV.2015.2458041
Publication status	Published - 1 Sept 2015

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Cornagliotti, E., Uruena, A., Aleman, M., Sharma, A., Tous, L., Russell, R., Choulat, P., Chen, J., John, J., Haslinger, M., Duerinckx, F., Dielissen, B., Gortzen, R., Black, L., & Szlufcik, J. (2015). Large-Area n-Type PERT Solar Cells Featuring Rear p⁺ Emitter Passivated by ALD Al₂O₃. IEEE Journal of Photovoltaics, 5(5), 1366-1372. Article 7174943. https://doi.org/10.1109/JPHOTOV.2015.2458041

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title = "Large-Area n-Type PERT Solar Cells Featuring Rear p+ Emitter Passivated by ALD Al2O3",

abstract = "We present large-area n-type PERT solar cells featuring a rear boron emitter passivated by a stack of ALD Al2O3 and PECVD SiOx. After illustrating the technological and fundamental advantages of such a device architecture, we show that the Al2O3/SiOx stack employed to passivate the boron emitter is unaffected by the rear metallization processes and can suppress the Shockley-Read-Hall surface recombination current to values below 2 fA/cm2, provided that the Al2O3 thickness is larger than 7 nm. Efficiencies of 21.5% on 156-mm commercial-grade Cz-Si substrates are demonstrated in this study, when the rear Al2O3/SiOx passivation is applied in combination with a homogeneous front-surface field (FSF). The passivation stack developed herein can sustain cell efficiencies in excess of 22% and Voc above 685 mV when a selective FSF is implemented, despite the absence of passivated contacts. Finally, we demonstrate that such cells do not suffer from light-induced degradation.",

keywords = "Atomic layer deposition (ALD) AlO, Cu-plating, n-PERT cell",

author = "Emanuele Cornagliotti and Angel Uruena and Monica Aleman and Aashish Sharma and Loic Tous and Richard Russell and Patrick Choulat and Jia Chen and Joachim John and Michael Haslinger and Filip Duerinckx and Bas Dielissen and Roger Gortzen and Lachlan Black and Jozef Szlufcik",

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year = "2015",

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doi = "10.1109/JPHOTOV.2015.2458041",

language = "English",

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Cornagliotti, E, Uruena, A, Aleman, M, Sharma, A, Tous, L, Russell, R, Choulat, P, Chen, J, John, J, Haslinger, M, Duerinckx, F, Dielissen, B, Gortzen, R, Black, L & Szlufcik, J 2015, 'Large-Area n-Type PERT Solar Cells Featuring Rear p⁺ Emitter Passivated by ALD Al₂O₃', IEEE Journal of Photovoltaics, vol. 5, no. 5, 7174943, pp. 1366-1372. https://doi.org/10.1109/JPHOTOV.2015.2458041

TY - JOUR

T1 - Large-Area n-Type PERT Solar Cells Featuring Rear p+ Emitter Passivated by ALD Al2O3

AU - Cornagliotti, Emanuele

AU - Uruena, Angel

AU - Aleman, Monica

AU - Sharma, Aashish

AU - Tous, Loic

AU - Russell, Richard

AU - Choulat, Patrick

AU - Chen, Jia

AU - John, Joachim

AU - Haslinger, Michael

AU - Duerinckx, Filip

AU - Dielissen, Bas

AU - Gortzen, Roger

AU - Black, Lachlan

AU - Szlufcik, Jozef

PY - 2015/9/1

Y1 - 2015/9/1

N2 - We present large-area n-type PERT solar cells featuring a rear boron emitter passivated by a stack of ALD Al2O3 and PECVD SiOx. After illustrating the technological and fundamental advantages of such a device architecture, we show that the Al2O3/SiOx stack employed to passivate the boron emitter is unaffected by the rear metallization processes and can suppress the Shockley-Read-Hall surface recombination current to values below 2 fA/cm2, provided that the Al2O3 thickness is larger than 7 nm. Efficiencies of 21.5% on 156-mm commercial-grade Cz-Si substrates are demonstrated in this study, when the rear Al2O3/SiOx passivation is applied in combination with a homogeneous front-surface field (FSF). The passivation stack developed herein can sustain cell efficiencies in excess of 22% and Voc above 685 mV when a selective FSF is implemented, despite the absence of passivated contacts. Finally, we demonstrate that such cells do not suffer from light-induced degradation.

AB - We present large-area n-type PERT solar cells featuring a rear boron emitter passivated by a stack of ALD Al2O3 and PECVD SiOx. After illustrating the technological and fundamental advantages of such a device architecture, we show that the Al2O3/SiOx stack employed to passivate the boron emitter is unaffected by the rear metallization processes and can suppress the Shockley-Read-Hall surface recombination current to values below 2 fA/cm2, provided that the Al2O3 thickness is larger than 7 nm. Efficiencies of 21.5% on 156-mm commercial-grade Cz-Si substrates are demonstrated in this study, when the rear Al2O3/SiOx passivation is applied in combination with a homogeneous front-surface field (FSF). The passivation stack developed herein can sustain cell efficiencies in excess of 22% and Voc above 685 mV when a selective FSF is implemented, despite the absence of passivated contacts. Finally, we demonstrate that such cells do not suffer from light-induced degradation.

KW - Atomic layer deposition (ALD) AlO

KW - Cu-plating

KW - n-PERT cell

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U2 - 10.1109/JPHOTOV.2015.2458041

DO - 10.1109/JPHOTOV.2015.2458041

M3 - Article

SN - 2156-3381

VL - 5

SP - 1366

EP - 1372

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 5

M1 - 7174943

ER -

Large-Area n-Type PERT Solar Cells Featuring Rear p⁺ Emitter Passivated by ALD Al₂O₃

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