Large melting-point hysteresis of Ge nanocrystals embedded in SiO2

Q. Xu; I. D. Sharp; C. W. Yuan; D. O. Yi; C. Y. Liao; A. M. Glaeser; A. M. Minor; J. W. Beeman; M. C. Ridgway; P. Kluth; J. W. Ager; D. C. Chrzan; E. E. Haller

doi:10.1103/PhysRevLett.97.155701

Large melting-point hysteresis of Ge nanocrystals embedded in SiO2

Q. Xu^*, I. D. Sharp, C. W. Yuan, D. O. Yi, C. Y. Liao, A. M. Glaeser, A. M. Minor, J. W. Beeman, M. C. Ridgway, P. Kluth, J. W. Ager, D. C. Chrzan, E. E. Haller

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

126 Citations (Scopus)

Abstract

The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (±17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.

Original language	English
Article number	155701
Journal	Physical Review Letters
Volume	97
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevLett.97.155701
Publication status	Published - 2006

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10.1103/PhysRevLett.97.155701

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title = "Large melting-point hysteresis of Ge nanocrystals embedded in SiO2",

abstract = "The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (±17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.",

author = "Q. Xu and Sharp, {I. D.} and Yuan, {C. W.} and Yi, {D. O.} and Liao, {C. Y.} and Glaeser, {A. M.} and Minor, {A. M.} and Beeman, {J. W.} and Ridgway, {M. C.} and P. Kluth and Ager, {J. W.} and Chrzan, {D. C.} and Haller, {E. E.}",

year = "2006",

doi = "10.1103/PhysRevLett.97.155701",

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journal = "Physical Review Letters",

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T1 - Large melting-point hysteresis of Ge nanocrystals embedded in SiO2

AU - Xu, Q.

AU - Sharp, I. D.

AU - Yuan, C. W.

AU - Yi, D. O.

AU - Liao, C. Y.

AU - Glaeser, A. M.

AU - Minor, A. M.

AU - Beeman, J. W.

AU - Ridgway, M. C.

AU - Kluth, P.

AU - Ager, J. W.

AU - Chrzan, D. C.

AU - Haller, E. E.

PY - 2006

Y1 - 2006

N2 - The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (±17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.

AB - The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (±17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.

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U2 - 10.1103/PhysRevLett.97.155701

DO - 10.1103/PhysRevLett.97.155701

M3 - Article

SN - 0031-9007

VL - 97

JO - Physical Review Letters

JF - Physical Review Letters

IS - 15

M1 - 155701

ER -

Large melting-point hysteresis of Ge nanocrystals embedded in SiO2

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