Large phase shifts in As2S3 waveguides for all-optical processing devices

Yinlan Ruan; Barry Luther-Davies; Weitang Li; Andrei Rode; Vesslin Kolev; Steve Madden

doi:10.1364/OL.30.002605

Large phase shifts in As₂S₃ waveguides for all-optical processing devices

Yinlan Ruan^*, Barry Luther-Davies, Weitang Li, Andrei Rode, Vesslin Kolev, Steve Madden

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

A large phase shift of 4.7π at 1.53 μm has been observed from a low-loss (0.2 dB/cm), small-core As₂S₃ waveguide fabricated by dry etching. The strength of the nonlinear response was limited by photosensitivity and photocrystallization of the As₂S₃ films at 1.53 μm, far below the material bandgap.

Original language	English
Pages (from-to)	2605-2607
Number of pages	3
Journal	Optics Letters
Volume	30
Issue number	19
DOIs	https://doi.org/10.1364/OL.30.002605
Publication status	Published - 1 Oct 2005

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title = "Large phase shifts in As2S3 waveguides for all-optical processing devices",

abstract = "A large phase shift of 4.7π at 1.53 μm has been observed from a low-loss (0.2 dB/cm), small-core As2S3 waveguide fabricated by dry etching. The strength of the nonlinear response was limited by photosensitivity and photocrystallization of the As2S3 films at 1.53 μm, far below the material bandgap.",

author = "Yinlan Ruan and Barry Luther-Davies and Weitang Li and Andrei Rode and Vesslin Kolev and Steve Madden",

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AU - Ruan, Yinlan

AU - Luther-Davies, Barry

AU - Li, Weitang

AU - Rode, Andrei

AU - Kolev, Vesslin

AU - Madden, Steve

PY - 2005/10/1

Y1 - 2005/10/1

N2 - A large phase shift of 4.7π at 1.53 μm has been observed from a low-loss (0.2 dB/cm), small-core As2S3 waveguide fabricated by dry etching. The strength of the nonlinear response was limited by photosensitivity and photocrystallization of the As2S3 films at 1.53 μm, far below the material bandgap.

AB - A large phase shift of 4.7π at 1.53 μm has been observed from a low-loss (0.2 dB/cm), small-core As2S3 waveguide fabricated by dry etching. The strength of the nonlinear response was limited by photosensitivity and photocrystallization of the As2S3 films at 1.53 μm, far below the material bandgap.

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DO - 10.1364/OL.30.002605

M3 - Article

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VL - 30

SP - 2605

EP - 2607

JO - Optics Letters

JF - Optics Letters

IS - 19

ER -

Large phase shifts in As₂S₃ waveguides for all-optical processing devices

Abstract

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