Laser-induced forward transfer of polythiophene-based derivatives for fully polymeric thin film transistors

Ludovic Rapp; Catalin Constantinescu; Philippe Delaporte; Anne Patricia Alloncle

doi:10.1016/j.orgel.2014.04.029

Laser-induced forward transfer of polythiophene-based derivatives for fully polymeric thin film transistors

Ludovic Rapp^*, Catalin Constantinescu, Philippe Delaporte, Anne Patricia Alloncle

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Polymeric thin-film transistors (pTFTs) have been fabricated by pulsed-laser printing of semiconductor and conductor polythiophene-based derivatives. Thin solid layers of semiconducting poly(3,3′″ didodecylquaterthiophene) (PQT-12) have been transferred by a laser-induced forward transfer (LIFT) technique on Si/SiO₂ receiver substrates. Optimization of the transfer conditions and of the pixels morphologies has been realized. A marked improvement in the quality of the pixels has been observed, in terms of morphology and structure, by reducing the environmental pressure to 90 mbar during LIFT. Subsequently, poly(3,4-ethylenedioxythiophene)/ poly(styrenesulfonate) (PEDOT:PSS) has also been laser-printed and used as source/drain electrodes in the transistor configuration. Functional polymeric transistors have been obtained with high field-effect mobility up to 2 × 10^-2 cm² V^-1 s^-1 together with current modulation of 10⁴.

Original language	English
Pages (from-to)	1868-1875
Number of pages	8
Journal	Organic Electronics
Volume	15
Issue number	8
DOIs	https://doi.org/10.1016/j.orgel.2014.04.029
Publication status	Published - Aug 2014
Externally published	Yes

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@article{41dc6635a0c34f36a4f538f456a1b6ed,

title = "Laser-induced forward transfer of polythiophene-based derivatives for fully polymeric thin film transistors",

abstract = "Polymeric thin-film transistors (pTFTs) have been fabricated by pulsed-laser printing of semiconductor and conductor polythiophene-based derivatives. Thin solid layers of semiconducting poly(3,3′″ didodecylquaterthiophene) (PQT-12) have been transferred by a laser-induced forward transfer (LIFT) technique on Si/SiO2 receiver substrates. Optimization of the transfer conditions and of the pixels morphologies has been realized. A marked improvement in the quality of the pixels has been observed, in terms of morphology and structure, by reducing the environmental pressure to 90 mbar during LIFT. Subsequently, poly(3,4-ethylenedioxythiophene)/ poly(styrenesulfonate) (PEDOT:PSS) has also been laser-printed and used as source/drain electrodes in the transistor configuration. Functional polymeric transistors have been obtained with high field-effect mobility up to 2 × 10-2 cm2 V-1 s-1 together with current modulation of 104.",

keywords = "Laser printing, Laser-induced forward transfer, Low pressure, Organic transistor, Polymer, Polythiophene",

author = "Ludovic Rapp and Catalin Constantinescu and Philippe Delaporte and Alloncle, {Anne Patricia}",

year = "2014",

month = aug,

doi = "10.1016/j.orgel.2014.04.029",

language = "English",

volume = "15",

pages = "1868--1875",

journal = "Organic Electronics",

issn = "1566-1199",

publisher = "Elsevier B.V.",

number = "8",

}

TY - JOUR

T1 - Laser-induced forward transfer of polythiophene-based derivatives for fully polymeric thin film transistors

AU - Rapp, Ludovic

AU - Constantinescu, Catalin

AU - Delaporte, Philippe

AU - Alloncle, Anne Patricia

PY - 2014/8

Y1 - 2014/8

N2 - Polymeric thin-film transistors (pTFTs) have been fabricated by pulsed-laser printing of semiconductor and conductor polythiophene-based derivatives. Thin solid layers of semiconducting poly(3,3′″ didodecylquaterthiophene) (PQT-12) have been transferred by a laser-induced forward transfer (LIFT) technique on Si/SiO2 receiver substrates. Optimization of the transfer conditions and of the pixels morphologies has been realized. A marked improvement in the quality of the pixels has been observed, in terms of morphology and structure, by reducing the environmental pressure to 90 mbar during LIFT. Subsequently, poly(3,4-ethylenedioxythiophene)/ poly(styrenesulfonate) (PEDOT:PSS) has also been laser-printed and used as source/drain electrodes in the transistor configuration. Functional polymeric transistors have been obtained with high field-effect mobility up to 2 × 10-2 cm2 V-1 s-1 together with current modulation of 104.

AB - Polymeric thin-film transistors (pTFTs) have been fabricated by pulsed-laser printing of semiconductor and conductor polythiophene-based derivatives. Thin solid layers of semiconducting poly(3,3′″ didodecylquaterthiophene) (PQT-12) have been transferred by a laser-induced forward transfer (LIFT) technique on Si/SiO2 receiver substrates. Optimization of the transfer conditions and of the pixels morphologies has been realized. A marked improvement in the quality of the pixels has been observed, in terms of morphology and structure, by reducing the environmental pressure to 90 mbar during LIFT. Subsequently, poly(3,4-ethylenedioxythiophene)/ poly(styrenesulfonate) (PEDOT:PSS) has also been laser-printed and used as source/drain electrodes in the transistor configuration. Functional polymeric transistors have been obtained with high field-effect mobility up to 2 × 10-2 cm2 V-1 s-1 together with current modulation of 104.

KW - Laser printing

KW - Laser-induced forward transfer

KW - Low pressure

KW - Organic transistor

KW - Polymer

KW - Polythiophene

UR - http://www.scopus.com/inward/record.url?scp=84903317078&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2014.04.029

DO - 10.1016/j.orgel.2014.04.029

M3 - Article

AN - SCOPUS:84903317078

SN - 1566-1199

VL - 15

SP - 1868

EP - 1875

JO - Organic Electronics

JF - Organic Electronics

IS - 8

ER -

Laser-induced forward transfer of polythiophene-based derivatives for fully polymeric thin film transistors

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