Laser-induced forward transfer of polythiophene-based derivatives for fully polymeric thin film transistors

Ludovic Rapp*, Catalin Constantinescu, Philippe Delaporte, Anne Patricia Alloncle

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

Polymeric thin-film transistors (pTFTs) have been fabricated by pulsed-laser printing of semiconductor and conductor polythiophene-based derivatives. Thin solid layers of semiconducting poly(3,3′″ didodecylquaterthiophene) (PQT-12) have been transferred by a laser-induced forward transfer (LIFT) technique on Si/SiO2 receiver substrates. Optimization of the transfer conditions and of the pixels morphologies has been realized. A marked improvement in the quality of the pixels has been observed, in terms of morphology and structure, by reducing the environmental pressure to 90 mbar during LIFT. Subsequently, poly(3,4-ethylenedioxythiophene)/ poly(styrenesulfonate) (PEDOT:PSS) has also been laser-printed and used as source/drain electrodes in the transistor configuration. Functional polymeric transistors have been obtained with high field-effect mobility up to 2 × 10-2 cm2 V-1 s-1 together with current modulation of 104.

Original languageEnglish
Pages (from-to)1868-1875
Number of pages8
JournalOrganic Electronics
Volume15
Issue number8
DOIs
Publication statusPublished - Aug 2014
Externally publishedYes

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