Laser induced memory bits in photorefractive LiNbO3 and LiTaO3

Saulius Juodkazis; Vygantas Mizeikis; Markas Sudžius; Hiroaki Misawa; Kenji Kitamura; Shunji Takekawa; Eugene G. Gamaly; Wieslaw Z. Krolikowski; Andrei V. Rode

doi:10.1007/s00339-008-4641-9

Laser induced memory bits in photorefractive LiNbO₃ and LiTaO₃

Saulius Juodkazis^*, Vygantas Mizeikis, Markas Sudžius, Hiroaki Misawa, Kenji Kitamura, Shunji Takekawa, Eugene G. Gamaly, Wieslaw Z. Krolikowski, Andrei V. Rode

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

We study experimentally the formation of refractive index voxels (volume elements) in photorefractive LiNbO₃ and LiTaO₃ crystals illuminated with high irradiance femtosecond laser pulses. We used 150 fs pulses at 800 nm wavelength (energy 6-50 nJ) tightly focused inside the crystals in a single shot regime. This resulted in a formation of a micrometer size region of elevated refractive index, which may be used as memory bits in information storage/retrieval application. The maximum refractive index change of 5×10^-4 was recorded in undoped LiNbO₃ at an average light intensity of ∼TW/cm² that is close to the breakdown threshold. A simple setup for photorefractive recording and in situ monitoring of the refractive index changes has been proposed.

Original language	English
Pages (from-to)	129-133
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	93
Issue number	1
DOIs	https://doi.org/10.1007/s00339-008-4641-9
Publication status	Published - Oct 2008

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abstract = "We study experimentally the formation of refractive index voxels (volume elements) in photorefractive LiNbO3 and LiTaO3 crystals illuminated with high irradiance femtosecond laser pulses. We used 150 fs pulses at 800 nm wavelength (energy 6-50 nJ) tightly focused inside the crystals in a single shot regime. This resulted in a formation of a micrometer size region of elevated refractive index, which may be used as memory bits in information storage/retrieval application. The maximum refractive index change of 5×10-4 was recorded in undoped LiNbO3 at an average light intensity of ∼TW/cm2 that is close to the breakdown threshold. A simple setup for photorefractive recording and in situ monitoring of the refractive index changes has been proposed.",

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AU - Juodkazis, Saulius

AU - Mizeikis, Vygantas

AU - Sudžius, Markas

AU - Misawa, Hiroaki

AU - Kitamura, Kenji

AU - Takekawa, Shunji

AU - Gamaly, Eugene G.

AU - Krolikowski, Wieslaw Z.

AU - Rode, Andrei V.

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Laser induced memory bits in photorefractive LiNbO₃ and LiTaO₃

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