LASER IRRADIATION EFFECTS IN SEMICONDUCTORS.

H. K. Wagenfeld; J. S. Williams; H. B. Harrison; R. G. Elliman

LASER IRRADIATION EFFECTS IN SEMICONDUCTORS.

H. K. Wagenfeld^*, J. S. Williams, H. B. Harrison, R. G. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

Laser and furnace annealing mechanisms in high-dose ion implanted silicon and gallium arsenide are examined in some detail using a number of complementary analysis techniques. Results indicate that the two predominant recrystallization processes, namely solid and liquid phase epitaxy, can lead to interesting structural effects and supersaturated solid solutions.

Original language	English
Pages (from-to)	244-247
Number of pages	4
Journal	Annual Proceedings - Reliability Physics (Symposium)
Volume	1
Publication status	Published - 1980
Event	Unknown conference - Cannes, Fr Duration: 22 Sept 1980 → 26 Sept 1980

Cite this

@article{b48fc2ca39c144a38efef9e3f0b01fba,

title = "LASER IRRADIATION EFFECTS IN SEMICONDUCTORS.",

abstract = "Laser and furnace annealing mechanisms in high-dose ion implanted silicon and gallium arsenide are examined in some detail using a number of complementary analysis techniques. Results indicate that the two predominant recrystallization processes, namely solid and liquid phase epitaxy, can lead to interesting structural effects and supersaturated solid solutions.",

author = "Wagenfeld, {H. K.} and Williams, {J. S.} and Harrison, {H. B.} and Elliman, {R. G.}",

year = "1980",

language = "English",

volume = "1",

pages = "244--247",

journal = "Annual Proceedings - Reliability Physics (Symposium)",

issn = "0099-9512",

note = "Unknown conference ; Conference date: 22-09-1980 Through 26-09-1980",

}

TY - JOUR

T1 - LASER IRRADIATION EFFECTS IN SEMICONDUCTORS.

AU - Wagenfeld, H. K.

AU - Williams, J. S.

AU - Harrison, H. B.

AU - Elliman, R. G.

PY - 1980

Y1 - 1980

N2 - Laser and furnace annealing mechanisms in high-dose ion implanted silicon and gallium arsenide are examined in some detail using a number of complementary analysis techniques. Results indicate that the two predominant recrystallization processes, namely solid and liquid phase epitaxy, can lead to interesting structural effects and supersaturated solid solutions.

AB - Laser and furnace annealing mechanisms in high-dose ion implanted silicon and gallium arsenide are examined in some detail using a number of complementary analysis techniques. Results indicate that the two predominant recrystallization processes, namely solid and liquid phase epitaxy, can lead to interesting structural effects and supersaturated solid solutions.

UR - http://www.scopus.com/inward/record.url?scp=0019103040&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0019103040

SN - 0099-9512

VL - 1

SP - 244

EP - 247

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

T2 - Unknown conference

Y2 - 22 September 1980 through 26 September 1980

ER -

LASER IRRADIATION EFFECTS IN SEMICONDUCTORS.

Abstract

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