Abstract
Laser and furnace annealing mechanisms in high-dose ion implanted silicon and gallium arsenide are examined in some detail using a number of complementary analysis techniques. Results indicate that the two predominant recrystallization processes, namely solid and liquid phase epitaxy, can lead to interesting structural effects and supersaturated solid solutions.
| Original language | English |
|---|---|
| Pages (from-to) | 244-247 |
| Number of pages | 4 |
| Journal | Annual Proceedings - Reliability Physics (Symposium) |
| Volume | 1 |
| Publication status | Published - 1980 |
| Event | Unknown conference - Cannes, Fr Duration: 22 Sept 1980 → 26 Sept 1980 |