Laser-Patterned n-Type Front-Junction Silicon Solar Cell With Tantalum Oxide/Silicon Nitride Passivation and Antireflection

Yimao Wan; Pei Chieh Hsiao; Wei Zhang; Alison Lennon; Yifeng Chen; Zhiqiang Feng; Pierre Verlinden; Christian Samundsett; Jie Cui; Di Yan; Andres Cuevas

doi:10.1002/solr.201700187

Laser-Patterned n-Type Front-Junction Silicon Solar Cell With Tantalum Oxide/Silicon Nitride Passivation and Antireflection

Yimao Wan^*, Pei Chieh Hsiao, Wei Zhang, Alison Lennon, Yifeng Chen, Zhiqiang Feng, Pierre Verlinden, Christian Samundsett, Jie Cui, Di Yan, Andres Cuevas

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

This work demonstrates, for the first time, a tantalum oxide/silicon nitride (Ta₂O₅/SiN_x) stack as a combined passivation and antireflection coating deposited on the boron-diffused front surface of n-type silicon solar cells. Due to the high chemical resistance of Ta₂O₅, the patterning of the films is realized via picosecond laser ablation, followed by a field-induced metal plating of nickel and copper to form the front metal grid electrode. A solar cell conversion efficiency of 19.3% is achieved, and further improvements are anticipated from the optimization of the laser ablation process and the tuning of the thickness of the individual layers of the dielectric stack.

Original language	English
Article number	1700187
Journal	Solar RRL
Volume	2
Issue number	2
DOIs	https://doi.org/10.1002/solr.201700187
Publication status	Published - 1 Feb 2018

Access to Document

10.1002/solr.201700187

Cite this

@article{ffc78df772fd4e0b87c38cca09b04c8d,

title = "Laser-Patterned n-Type Front-Junction Silicon Solar Cell With Tantalum Oxide/Silicon Nitride Passivation and Antireflection",

abstract = "This work demonstrates, for the first time, a tantalum oxide/silicon nitride (Ta2O5/SiNx) stack as a combined passivation and antireflection coating deposited on the boron-diffused front surface of n-type silicon solar cells. Due to the high chemical resistance of Ta2O5, the patterning of the films is realized via picosecond laser ablation, followed by a field-induced metal plating of nickel and copper to form the front metal grid electrode. A solar cell conversion efficiency of 19.3% is achieved, and further improvements are anticipated from the optimization of the laser ablation process and the tuning of the thickness of the individual layers of the dielectric stack.",

keywords = "antireflection, passivation, silicon nitride, silicon solar cells, tantalum oxide",

author = "Yimao Wan and Hsiao, {Pei Chieh} and Wei Zhang and Alison Lennon and Yifeng Chen and Zhiqiang Feng and Pierre Verlinden and Christian Samundsett and Jie Cui and Di Yan and Andres Cuevas",

note = "Publisher Copyright: {\textcopyright} 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2018",

month = feb,

day = "1",

doi = "10.1002/solr.201700187",

language = "English",

volume = "2",

journal = "Solar RRL",

issn = "2367-198X",

publisher = "Wiley-VCH Verlag GmbH",

number = "2",

}

TY - JOUR

T1 - Laser-Patterned n-Type Front-Junction Silicon Solar Cell With Tantalum Oxide/Silicon Nitride Passivation and Antireflection

AU - Wan, Yimao

AU - Hsiao, Pei Chieh

AU - Zhang, Wei

AU - Lennon, Alison

AU - Chen, Yifeng

AU - Feng, Zhiqiang

AU - Verlinden, Pierre

AU - Samundsett, Christian

AU - Cui, Jie

AU - Yan, Di

AU - Cuevas, Andres

PY - 2018/2/1

Y1 - 2018/2/1

N2 - This work demonstrates, for the first time, a tantalum oxide/silicon nitride (Ta2O5/SiNx) stack as a combined passivation and antireflection coating deposited on the boron-diffused front surface of n-type silicon solar cells. Due to the high chemical resistance of Ta2O5, the patterning of the films is realized via picosecond laser ablation, followed by a field-induced metal plating of nickel and copper to form the front metal grid electrode. A solar cell conversion efficiency of 19.3% is achieved, and further improvements are anticipated from the optimization of the laser ablation process and the tuning of the thickness of the individual layers of the dielectric stack.

AB - This work demonstrates, for the first time, a tantalum oxide/silicon nitride (Ta2O5/SiNx) stack as a combined passivation and antireflection coating deposited on the boron-diffused front surface of n-type silicon solar cells. Due to the high chemical resistance of Ta2O5, the patterning of the films is realized via picosecond laser ablation, followed by a field-induced metal plating of nickel and copper to form the front metal grid electrode. A solar cell conversion efficiency of 19.3% is achieved, and further improvements are anticipated from the optimization of the laser ablation process and the tuning of the thickness of the individual layers of the dielectric stack.

KW - antireflection

KW - passivation

KW - silicon nitride

KW - silicon solar cells

KW - tantalum oxide

UR - http://www.scopus.com/inward/record.url?scp=85083621987&partnerID=8YFLogxK

U2 - 10.1002/solr.201700187

DO - 10.1002/solr.201700187

M3 - Article

SN - 2367-198X

VL - 2

JO - Solar RRL

JF - Solar RRL

IS - 2

M1 - 1700187

ER -

Laser-Patterned n-Type Front-Junction Silicon Solar Cell With Tantalum Oxide/Silicon Nitride Passivation and Antireflection

Abstract

Access to Document

Other files and links

Fingerprint

Cite this