TY - JOUR
T1 - Laser printing of a semiconducting oligomer as active layer in organic thin film transistors
T2 - Impact of a protecting triazene layer
AU - Rapp, Ludovic
AU - Diallo, Abdou Karim
AU - Nénon, Sébastien
AU - Alloncle, Anne Patricia
AU - Videlot-Ackermann, Christine
AU - Fages, Frédéric
AU - Nagel, Matthias
AU - Lippert, Thomas
AU - Delaporte, Philippe
PY - 2012/1/31
Y1 - 2012/1/31
N2 - Organic thin-film transistor (OTFT) devices were achieved using the laser-induced forward transfer technique. As p-type organic semiconductor, distyryl-quaterthiophene (DS4T) was vacuum-deposited on a donor substrate and transferred with picosecond laser pulses on Si/SiO 2-based receiver substrates to form an organic active layer. To avoid laser damage of the organic thin film, a UV-sensitive aryltriazene polymer as a sacrificial layer was used. The polymer layer, deposited on the donor substrate prior to the organic layer deposition, has high absorption at the laser wavelength and does not contaminate the printed pixels. The DS4T pixels printed on receiver substrates have well defined morphological properties as shown by atomic force microscopy and scanning electronic microscopy. OTFT devices were characterized in top- and bottom-contact configurations using thermally evaporated gold lines as source-drain electrodes. DS4T pixels printed as active layer for charge transport not only issue mobility values comparable to DS4T layers prepared by vacuum evaporation but also a relative electrical stability over time.
AB - Organic thin-film transistor (OTFT) devices were achieved using the laser-induced forward transfer technique. As p-type organic semiconductor, distyryl-quaterthiophene (DS4T) was vacuum-deposited on a donor substrate and transferred with picosecond laser pulses on Si/SiO 2-based receiver substrates to form an organic active layer. To avoid laser damage of the organic thin film, a UV-sensitive aryltriazene polymer as a sacrificial layer was used. The polymer layer, deposited on the donor substrate prior to the organic layer deposition, has high absorption at the laser wavelength and does not contaminate the printed pixels. The DS4T pixels printed on receiver substrates have well defined morphological properties as shown by atomic force microscopy and scanning electronic microscopy. OTFT devices were characterized in top- and bottom-contact configurations using thermally evaporated gold lines as source-drain electrodes. DS4T pixels printed as active layer for charge transport not only issue mobility values comparable to DS4T layers prepared by vacuum evaporation but also a relative electrical stability over time.
KW - Distyryl-quaterthiophene
KW - Dynamic release layer
KW - Laser printing
KW - Laser-induced forward transfer
KW - Oligomer
KW - Organic thin-film transistor
KW - Triazene polymer
UR - http://www.scopus.com/inward/record.url?scp=84856398696&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2011.10.159
DO - 10.1016/j.tsf.2011.10.159
M3 - Article
AN - SCOPUS:84856398696
SN - 0040-6090
VL - 520
SP - 3043
EP - 3047
JO - Thin Solid Films
JF - Thin Solid Films
IS - 7
ER -