Laser printing of n- and p-type semiconductors for complex organic thin film transistors

L. Rapp; J. Ailuno; A. P. Alloncle; S. Nénon; C. Videlot-Ackermann; F. Fages; P. Delaporte

doi:10.1051/uvx/2011033

Laser printing of n- and p-type semiconductors for complex organic thin film transistors

L. Rapp, J. Ailuno, A. P. Alloncle, S. Nénon, C. Videlot-Ackermann, F. Fages, P. Delaporte

Research output: Contribution to conference › Paper › peer-review

Abstract

With the goal to study complex organic thin film transistor (OTFT) architecture, thin films of semiconductors and of metallic materials have been laser printed. The n-type copper hexa deca fluoro phthalocyanine (F ₁₆CuPc) and p-type copper phthalocyanine (CuPc) semiconductors have been used to form the active layers. The materials have been successively transferred onto a receiver substrate by laser pulses in the picosecond regime. The latter substrate has formed the gate and the dielectric of the transistor. The three materials have been then combined in a multilayer stack prepared by the successive depositions of the materials by thermal evaporation under vacuum and then laser have been printed in a single step.

Original language	English
Pages	221-225
Number of pages	5
DOIs	https://doi.org/10.1051/uvx/2011033
Publication status	Published - 2011
Externally published	Yes
Event	10e Colloque sur les Sources Coherentes et Incoherentes UV, VUV et X: Applications et Developpements Recents, UVX 2010 - 10th Symposium on Sources Consistent and Inconsistent UV, VUV and X: Recent Developments and Applications, UVX 2010 - Ile de Porquerolles, France Duration: 21 Sept 2010 → 24 Sept 2010

Conference

Conference	10e Colloque sur les Sources Coherentes et Incoherentes UV, VUV et X: Applications et Developpements Recents, UVX 2010 - 10th Symposium on Sources Consistent and Inconsistent UV, VUV and X: Recent Developments and Applications, UVX 2010
Country/Territory	France
City	Ile de Porquerolles
Period	21/09/10 → 24/09/10

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Rapp, L., Ailuno, J., Alloncle, A. P., Nénon, S., Videlot-Ackermann, C., Fages, F., & Delaporte, P. (2011). Laser printing of n- and p-type semiconductors for complex organic thin film transistors. 221-225. Paper presented at 10e Colloque sur les Sources Coherentes et Incoherentes UV, VUV et X: Applications et Developpements Recents, UVX 2010 - 10th Symposium on Sources Consistent and Inconsistent UV, VUV and X: Recent Developments and Applications, UVX 2010, Ile de Porquerolles, France. https://doi.org/10.1051/uvx/2011033

Rapp, L. ; Ailuno, J. ; Alloncle, A. P. et al. / Laser printing of n- and p-type semiconductors for complex organic thin film transistors. Paper presented at 10e Colloque sur les Sources Coherentes et Incoherentes UV, VUV et X: Applications et Developpements Recents, UVX 2010 - 10th Symposium on Sources Consistent and Inconsistent UV, VUV and X: Recent Developments and Applications, UVX 2010, Ile de Porquerolles, France.5 p.

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title = "Laser printing of n- and p-type semiconductors for complex organic thin film transistors",

abstract = "With the goal to study complex organic thin film transistor (OTFT) architecture, thin films of semiconductors and of metallic materials have been laser printed. The n-type copper hexa deca fluoro phthalocyanine (F 16CuPc) and p-type copper phthalocyanine (CuPc) semiconductors have been used to form the active layers. The materials have been successively transferred onto a receiver substrate by laser pulses in the picosecond regime. The latter substrate has formed the gate and the dielectric of the transistor. The three materials have been then combined in a multilayer stack prepared by the successive depositions of the materials by thermal evaporation under vacuum and then laser have been printed in a single step.",

author = "L. Rapp and J. Ailuno and Alloncle, {A. P.} and S. N{\'e}non and C. Videlot-Ackermann and F. Fages and P. Delaporte",

year = "2011",

doi = "10.1051/uvx/2011033",

language = "English",

pages = "221--225",

note = "10e Colloque sur les Sources Coherentes et Incoherentes UV, VUV et X: Applications et Developpements Recents, UVX 2010 - 10th Symposium on Sources Consistent and Inconsistent UV, VUV and X: Recent Developments and Applications, UVX 2010 ; Conference date: 21-09-2010 Through 24-09-2010",

}

Rapp, L, Ailuno, J, Alloncle, AP, Nénon, S, Videlot-Ackermann, C, Fages, F & Delaporte, P 2011, 'Laser printing of n- and p-type semiconductors for complex organic thin film transistors', Paper presented at 10e Colloque sur les Sources Coherentes et Incoherentes UV, VUV et X: Applications et Developpements Recents, UVX 2010 - 10th Symposium on Sources Consistent and Inconsistent UV, VUV and X: Recent Developments and Applications, UVX 2010, Ile de Porquerolles, France, 21/09/10 - 24/09/10 pp. 221-225. https://doi.org/10.1051/uvx/2011033

Laser printing of n- and p-type semiconductors for complex organic thin film transistors. / Rapp, L.; Ailuno, J.; Alloncle, A. P. et al.
2011. 221-225 Paper presented at 10e Colloque sur les Sources Coherentes et Incoherentes UV, VUV et X: Applications et Developpements Recents, UVX 2010 - 10th Symposium on Sources Consistent and Inconsistent UV, VUV and X: Recent Developments and Applications, UVX 2010, Ile de Porquerolles, France.

Research output: Contribution to conference › Paper › peer-review

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T1 - Laser printing of n- and p-type semiconductors for complex organic thin film transistors

AU - Rapp, L.

AU - Ailuno, J.

AU - Alloncle, A. P.

AU - Nénon, S.

AU - Videlot-Ackermann, C.

AU - Fages, F.

AU - Delaporte, P.

PY - 2011

Y1 - 2011

N2 - With the goal to study complex organic thin film transistor (OTFT) architecture, thin films of semiconductors and of metallic materials have been laser printed. The n-type copper hexa deca fluoro phthalocyanine (F 16CuPc) and p-type copper phthalocyanine (CuPc) semiconductors have been used to form the active layers. The materials have been successively transferred onto a receiver substrate by laser pulses in the picosecond regime. The latter substrate has formed the gate and the dielectric of the transistor. The three materials have been then combined in a multilayer stack prepared by the successive depositions of the materials by thermal evaporation under vacuum and then laser have been printed in a single step.

AB - With the goal to study complex organic thin film transistor (OTFT) architecture, thin films of semiconductors and of metallic materials have been laser printed. The n-type copper hexa deca fluoro phthalocyanine (F 16CuPc) and p-type copper phthalocyanine (CuPc) semiconductors have been used to form the active layers. The materials have been successively transferred onto a receiver substrate by laser pulses in the picosecond regime. The latter substrate has formed the gate and the dielectric of the transistor. The three materials have been then combined in a multilayer stack prepared by the successive depositions of the materials by thermal evaporation under vacuum and then laser have been printed in a single step.

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T2 - 10e Colloque sur les Sources Coherentes et Incoherentes UV, VUV et X: Applications et Developpements Recents, UVX 2010 - 10th Symposium on Sources Consistent and Inconsistent UV, VUV and X: Recent Developments and Applications, UVX 2010

Y2 - 21 September 2010 through 24 September 2010

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Rapp L, Ailuno J, Alloncle AP, Nénon S, Videlot-Ackermann C, Fages F et al.. Laser printing of n- and p-type semiconductors for complex organic thin film transistors. 2011. Paper presented at 10e Colloque sur les Sources Coherentes et Incoherentes UV, VUV et X: Applications et Developpements Recents, UVX 2010 - 10th Symposium on Sources Consistent and Inconsistent UV, VUV and X: Recent Developments and Applications, UVX 2010, Ile de Porquerolles, France. doi: 10.1051/uvx/2011033

Laser printing of n- and p-type semiconductors for complex organic thin film transistors

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