Latent ion tracks in amorphous silicon

T. Bierschenk*, R. Giulian, B. Afra, M. D. Rodriguez, D. Schauries, S. Mudie, O. H. Pakarinen, F. Djurabekova, K. Nordlund, O. Osmani, N. Medvedev, B. Rethfeld, M. C. Ridgway, P. Kluth

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    30 Citations (Scopus)

    Abstract

    We present experimental evidence for the formation of ion tracks in amorphous Si induced by swift heavy-ion irradiation. An underlying core-shell structure consistent with remnants of a high-density liquid structure was revealed by small-angle x-ray scattering and molecular dynamics simulations. Ion track dimensions differ for as-implanted and relaxed Si as attributed to different microstructures and melting temperatures. The identification and characterization of ion tracks in amorphous Si yields new insight into mechanisms of damage formation due to swift heavy-ion irradiation in amorphous semiconductors.

    Original languageEnglish
    Article number174111
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume88
    Issue number17
    DOIs
    Publication statusPublished - 25 Nov 2013

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