Lattice damage produced in GaN by swift heavy ions

S. O. Kucheyev; H. Timmers; J. Zou; J. S. Williams; C. Jagadish; G. Li

doi:10.1063/1.1703826

Lattice damage produced in GaN by swift heavy ions

S. O. Kucheyev^*, H. Timmers, J. Zou, J. S. Williams, C. Jagadish, G. Li

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

82 Citations (Scopus)

Abstract

The Wurtzite GaN epilayers bombarded at 300 K with 200 MeV ¹⁹⁷Au ¹⁶⁺ ion by a combination of transmission electron microscopy (TEM) and Rutherford backscattering/channeling spectrometry (RBS/C) were studied. The results reveal the formation of near-continuous tracks propagating throughout the entire ∼1.5-μ-thick GaN film. It was shown that throughout the bombarded epilayer, high-resolution TEM reveals planar defects which were parallel to the basal plane of the GaN film. It was observed that the gross level of lattice disorder, as measured by RBS/C, gradually increases with increasing ion fluence up to ∼10 ¹³ cm ^-2.

Original language	English
Pages (from-to)	5360-5365
Number of pages	6
Journal	Journal of Applied Physics
Volume	95
Issue number	10
DOIs	https://doi.org/10.1063/1.1703826
Publication status	Published - 15 May 2004

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title = "Lattice damage produced in GaN by swift heavy ions",

abstract = "The Wurtzite GaN epilayers bombarded at 300 K with 200 MeV 197Au 16+ ion by a combination of transmission electron microscopy (TEM) and Rutherford backscattering/channeling spectrometry (RBS/C) were studied. The results reveal the formation of near-continuous tracks propagating throughout the entire ∼1.5-μ-thick GaN film. It was shown that throughout the bombarded epilayer, high-resolution TEM reveals planar defects which were parallel to the basal plane of the GaN film. It was observed that the gross level of lattice disorder, as measured by RBS/C, gradually increases with increasing ion fluence up to ∼10 13 cm -2.",

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AU - Kucheyev, S. O.

AU - Timmers, H.

AU - Zou, J.

AU - Williams, J. S.

AU - Jagadish, C.

AU - Li, G.

PY - 2004/5/15

Y1 - 2004/5/15

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AB - The Wurtzite GaN epilayers bombarded at 300 K with 200 MeV 197Au 16+ ion by a combination of transmission electron microscopy (TEM) and Rutherford backscattering/channeling spectrometry (RBS/C) were studied. The results reveal the formation of near-continuous tracks propagating throughout the entire ∼1.5-μ-thick GaN film. It was shown that throughout the bombarded epilayer, high-resolution TEM reveals planar defects which were parallel to the basal plane of the GaN film. It was observed that the gross level of lattice disorder, as measured by RBS/C, gradually increases with increasing ion fluence up to ∼10 13 cm -2.

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Lattice damage produced in GaN by swift heavy ions

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