Lattice damage produced in GaN by swift heavy ions

S. O. Kucheyev; H. Timmers; J. Zou; J. S. Williams; C. Jagadish; G. Li

doi:10.1063/1.1703826

Lattice damage produced in GaN by swift heavy ions

S. O. Kucheyev^*, H. Timmers, J. Zou, J. S. Williams, C. Jagadish, G. Li

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

85 Citations (Scopus)

Abstract

The Wurtzite GaN epilayers bombarded at 300 K with 200 MeV ¹⁹⁷Au ¹⁶⁺ ion by a combination of transmission electron microscopy (TEM) and Rutherford backscattering/channeling spectrometry (RBS/C) were studied. The results reveal the formation of near-continuous tracks propagating throughout the entire ∼1.5-μ-thick GaN film. It was shown that throughout the bombarded epilayer, high-resolution TEM reveals planar defects which were parallel to the basal plane of the GaN film. It was observed that the gross level of lattice disorder, as measured by RBS/C, gradually increases with increasing ion fluence up to ∼10 ¹³ cm ^-2.

Original language	English
Pages (from-to)	5360-5365
Number of pages	6
Journal	Journal of Applied Physics
Volume	95
Issue number	10
DOIs	https://doi.org/10.1063/1.1703826
Publication status	Published - 15 May 2004

Access to Document

10.1063/1.1703826

Cite this

@article{752ee30f029d4545a4582f9da1add219,

title = "Lattice damage produced in GaN by swift heavy ions",

abstract = "The Wurtzite GaN epilayers bombarded at 300 K with 200 MeV 197Au 16+ ion by a combination of transmission electron microscopy (TEM) and Rutherford backscattering/channeling spectrometry (RBS/C) were studied. The results reveal the formation of near-continuous tracks propagating throughout the entire ∼1.5-μ-thick GaN film. It was shown that throughout the bombarded epilayer, high-resolution TEM reveals planar defects which were parallel to the basal plane of the GaN film. It was observed that the gross level of lattice disorder, as measured by RBS/C, gradually increases with increasing ion fluence up to ∼10 13 cm -2.",

author = "Kucheyev, \{S. O.\} and H. Timmers and J. Zou and Williams, \{J. S.\} and C. Jagadish and G. Li",

year = "2004",

month = may,

day = "15",

doi = "10.1063/1.1703826",

language = "English",

volume = "95",

pages = "5360--5365",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Lattice damage produced in GaN by swift heavy ions

AU - Kucheyev, S. O.

AU - Timmers, H.

AU - Zou, J.

AU - Williams, J. S.

AU - Jagadish, C.

AU - Li, G.

PY - 2004/5/15

Y1 - 2004/5/15

N2 - The Wurtzite GaN epilayers bombarded at 300 K with 200 MeV 197Au 16+ ion by a combination of transmission electron microscopy (TEM) and Rutherford backscattering/channeling spectrometry (RBS/C) were studied. The results reveal the formation of near-continuous tracks propagating throughout the entire ∼1.5-μ-thick GaN film. It was shown that throughout the bombarded epilayer, high-resolution TEM reveals planar defects which were parallel to the basal plane of the GaN film. It was observed that the gross level of lattice disorder, as measured by RBS/C, gradually increases with increasing ion fluence up to ∼10 13 cm -2.

AB - The Wurtzite GaN epilayers bombarded at 300 K with 200 MeV 197Au 16+ ion by a combination of transmission electron microscopy (TEM) and Rutherford backscattering/channeling spectrometry (RBS/C) were studied. The results reveal the formation of near-continuous tracks propagating throughout the entire ∼1.5-μ-thick GaN film. It was shown that throughout the bombarded epilayer, high-resolution TEM reveals planar defects which were parallel to the basal plane of the GaN film. It was observed that the gross level of lattice disorder, as measured by RBS/C, gradually increases with increasing ion fluence up to ∼10 13 cm -2.

UR - https://www.scopus.com/pages/publications/2942566170

U2 - 10.1063/1.1703826

DO - 10.1063/1.1703826

M3 - Article

SN - 0021-8979

VL - 95

SP - 5360

EP - 5365

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Lattice damage produced in GaN by swift heavy ions

Abstract

Access to Document

Other files and links

Fingerprint

Cite this